Carnegie Mellon University

Katayun Barmak Vaziri

Kevin Robert Coffey

Mark H Kryder

Dooho Choi

Steven D Granz

Interconnects for semiconductors formed of materials that exhibit crystallographic anisotropy of the resistivity size effect such that line resistivity in one crystallographic orientation becomes lower than the resistivity in the other directions and methods of fabrication and use thereof are described. A wire having a dimension that results in an increase in the electrical resistivity of the wire can be formed of a material with a conductive anisotropy due to crystallographic orientation relative to the direction of current flow that minimizes the increase in the electrical resistivity as compared to the other orientations at that dimension.

Oriented crystal nanowire interconnects

Iron-platinum (FePt) based magnetic recording media structures that provide small grain size and isolated-grain configurations suitable for high-density magnetic recording. In one of the structures, the recording media structure includes a thin film containing grains of L1FePt and boron as a segregant contained in intergranular regions located among the FePt grains. In another structure, the recording media structure includes a thin film containing grains of L1FePt, wherein the film is formed on an underlayer containing at least one material selected to control the size of the FePt grains in the film. Proper choices of materials, relative amounts of the materials, processing parameters, and other variables permit these structures to be formed with grain sizes, magnetization orientations, and perpendicular coercivities that allow designers to create magnetic storage devices having storage densities of 1 Tbit/inand greater.

Growing community of inventors

White Plains, NY, United States of America

Katayun Barmak Vaziri