The Foundation: the Research Institute of Electric and Magnetic Alloys

The Foundation: the Research Institute of Electric and Magentic Alloys

Katashi Masumoto

Yuetsu Murakami

Naoji Nakamura

Seishi Abe

Katsumi Mochizuki

High temperature coefficient of resistance (TCR) appropriate for the sensor evices is attained by an alloy consisting, by atomic %, of from 5 to 65% of Fe, and from 0.01 to 20% in total of at least one auxiliary component selected from the group consisting of 20% or less of Ni, 20% or less of Co, 20% or less of Ag, 20% or less of Au, 20% or less of Pt, 10% or less of Rh, 10% or less of Ir, 10% or less of Os, 10% or less of Ru, 10% or less of Cr, 5% or less of V, 5% or less of Ti, 5% or less of Zr, 5% or less of Hf, 8% or less of Mo, 5% or less of Nb, 10% or less of W, 8% or less of Ta, 3% or less of Ga, 3% or less of Ge, 3% or less of In, 3% or less of Be, 5% or less of Sn, 3% or less of Sb, 5% or less of Cu, 5% or less of Al, 5% or less of Si, 2% or less of C, 2% or less of B, and 5% or less of a rare earth element, the balance being essentially Pd and minor amount of impurities, and said alloy having 4000.times.10.sup.-6.degree. C..sup.-1 or more of TCR in a temperature range of from 0.degree. to 200.degree. C. The alloy may further contain from 5 to 65% of Mn.

Electrical resistant alloy having a high temperature coefficient of

The present invention relates to a wear-resistant high permeability alloy nsisting of Ni, Nb, C and Fe, a wear-resistant high permeability alloy consisting of Ni, Nb, C and Fe as main components and at least one element selected from the group consisting of Cr, Mo, Ge, Au, Co, V, W, Cu, Ta, Mn, Al, Si, Ti, Zr, Hf, Sn, Sb, Ga, In, Tl, Zn, Cd, rare earth element, platinum element, Be, Ag, Sr, B, P, N, O, S as a secondary component and a method of manufacturing the same and a magnetic recording and reproducing head, and an object of the invention is to obtain an excellent wear-resistant magnetic alloy having easy forging processability, a large effective permeability, a saturated flux density of more than 4000G, and a recrystallization texture of {110}&lt;112&gt;+{311}&lt;112&gt;+{111}&lt;112&gt;, and a wear-resistant high permeability alloy consisting by weight of Ni 60-90%, Nb 0.5-14%, C 0.0003-0.7% and the remainder Fe and a small amount of impurities, and having a recrystallization texture of {110}&lt;112&gt;+{311}&lt;112&gt;+{111}&lt;112&gt; with an effective permeability of more than 3000 at 1 KHz and a saturated flux density of more than 4000G.

Wear-resistant high permability alloy and method of manufacturing the

The present invention provides a method for manufacturing a wear resistant igh permeability alloy consisting by weight of 60-90% Ni, 0.5-14% Nb, 0.0003-0.3% N and O in total (excluding 0% of N or O), and a remainder of Fe. The alloy has more than 3000 of effective permeability at 1 KHz, more than 4000 G of a saturated flux density and a recrystallization texture of {110}&lt;112&gt;+{311}&lt;112&gt;.

Wear-resistant high permeability magnetic alloy and method of

The present invention provides a wear resistant high permeability magnetic lloy Ni, Nb, N, O and Fe as main components. The alloy may include secondary components of at least one element selected from the group consisting of Cr, Mo, Ge, Au, Co, V, W, Cu, Ta, Mn, Al, Si, Ti, Zr, Hf, Sn, Sb, Ga, In, Tl, Zn, Cd, rare earth element, platinum element, Be, Ag, Sr, Ba, B, P, C and S. The magnetic alloy has good wear resistance having easy forgeability, a large effective permeability, more than 4000 G of a saturated flux density and a recrystallization texture of {110}&lt;112&gt;+{311}&lt;112&gt;.

The present invention relates to a solid solution semiconductor laser element material which can be used for a laser element which oscillates within an inflated region of wavelength range of 0.4-8 .mu.m, can vary wavelength and can be operable in the vicinity of room temperature. The present invention more particularly relates to a material which can be used for a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.

Solid-solution semiconductor laser element material and laser element

The present invention relates to a solid solution semiconductor laser element material which can form a laser element which oscillates in an infrared region of wavelength 0.2-8 .mu.m, varies wavelength and is operable in the vicinity of room temperature, particularly a laser element of a lattice-matching double hetero junction or lattice-matching quantum well structure. The disclosed solid state semiconductor is made of a material selected from a material having the general chemical formula

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Sendai, Japan

Katashi Masumoto