Lgz Landis Gyr Zug Ag

Gyr Zug Ag

Lgz Landis

Igz Landis & Gyr Zug Ag

Katalin Solt

Radivoje Popovic

Heinz Lienhard

Jean-Luc Berchier

Gernot Schneider

Heinrich P Baltes

Tomislav Zajc

A memory device for digital electronic signals includes at least one micro-mechanical memory element. The memory element includes a support having recess defined therein and a curved mechanical component bridging the recess and fixed to the support. The mechanical component has two stable positions, each of which being maintained by mechanical forces, one concave down towards the support and the other convex up away from the support. The mechanical component is adapted to be selectively changed from one stable position to the other stable position during a writing cycle and to have its stable position determined during a reading cycle so that the memory element can be used for storing binary logic information.

Non-volatile memory device including a micro-mechanical storage element

A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected through a feedback control circuit to control the thickness of the P-N junction barrier, thereby ensuring long duration, temperture stability and linearity for the Hall element.

Buried Hall element

The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.

Magnetic field sensor

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Zug, Switzerland

Katalin Solt