University of California

Taiwan Semiconductor Manufacturing Comp. Ltd.

Kasra Sardashti

Andrew C Kummel

Iljo Kwak

Wilman Tsai

Naomi Yoshida

Zi-Wei Fang

Hsiang-Pi Chang

Shariq Siddiqui

Adam Brand

Tobin Kaufman-Osborn

Bhagawan Sahu

Hong-Fa Luan

Tyler Kent

Maximillian Clemons

Scott Ueda

Mahmut Kavrik

A semiconductor structure includes a nanofog oxide adhered to an inert 2D or 3D surface or a weakly reactive metal surface, the nanofog oxide consisting essentially of 0.5-2 nm AlOnanoparticles. The nanofog can also consists of sub 1 nm particles. Oxide layers can be formed on the nanofog, for example a bilayer stack of AlO—HfO. Additional examples are from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO. The structure provides the basis for various devices, including MIM capacitors, FET transistors and MOSCAP capacitors.

Semiconductor structure with nanofog oxide adhered to inert or weakly reactive surfaces

A method for forming a high-k oxide includes forming a nanofog of AlOnanoparticles and conducting subsequent ALD deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2D or 3D surface, the nano oxide consisting essentially of sub 1 nm AlOnanoparticles. Additional oxide layers can be formed on the nanofog. Examples are from the group of selected from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO3, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO.

Method for ALD deposition on inert surfaces via Al2O3 nanoparticles

The present disclosure provides a method of forming a nanolaminate structure. First, a pre-treatment is performed on a semiconductor substrate, in which the semiconductor substrate includes SiGe. Then, a first metal oxide layer is formed on the semiconductor substrate. Then, at least one second metal oxide layer and at least one third metal oxide layer are alternately stacked on the first metal oxide layer, thereby forming a nanolaminate structure. And, a conductive gate layer is formed on the nanolaminate structure.

Nanolaminate structure, semiconductor device and method of forming nanolaminate structure

Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S&#x2014;H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200&#xb0; C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200&#xb0; C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Low temperature atomic layer deposition of oxides on compound semiconductors

Growing community of inventors

Laguna Hills, CA, United States of America

Kasra Sardashti