Applied Materials, Inc.

Applied Material, Inc.

Kartik Bhupendra Shah

Vishwas Kumar Pandey

Nyi O Myo

Zhiyuan Ye

Eric Kihara Shono

Schubert S Chu

Sanjeev Baluja

Christopher Sean Olsen

Ala Moradian

Edric Tong

Zhepeng Cong

Umesh M Kelkar

Dhritiman Subha Kashyap

Kevin Joseph Bautista

Errol Antonio C Sanchez

Lara Hawrylchak

Paul Brillhart

Anzhong Chang

Rene George

Kin Pong Lo

Karthik Ramanathan

Hansel Lo

Shu-Kwan Danny Lau

James Francis Mack

Chaowei Wang

Richard Omar Collins

Elizabeth Neville

Michael Robert Rice

Stephen Moffatt

Yi-Chiau Huang

Xuebin Li

Balasubramanian Ramachandran

Brian Hayes Burrows

Agus Sofian Tjandra

Tobin Kaufman-Osborn

Zuoming Zhu

Sairaju Tallavarjula

Prahallad Iyengar

Joseph Michael Ranish

David K Carlson

Tetsuya Ishikawa

Swaminathan T Srinivasan

Jeffrey A Tobin

Peter Reimer

Mats Larsson

Ashutosh Agarwal

Satish Radhakrishnan

Matthias Bauer

Kevin A Papke

Erika Hansen

Hemantha Raju

Abhilash J Mayur

Hanhong Chen

Kevin Griffin

Adolph Miller Allen

Mehran Behdjat

Joseph F AuBuchon

Satheesh Kuppurao

Johanes F Swenberg

Feng Chen

Prashanth Kothnur

Martin A Hilkene

Dongming Iu

Michael Sterling Jackson

Kenneth Brian Doering

Mark Robert Denome

Surajit Kumar

Nitin Pathak

Kartik Santhanam

Wenjing Xu

Roger Curtis

Tuan Anh Nguyen

Wei W Wang

Vijay D Parkhe

Anantha K Subramani

Amit Kumar Bansal

Pravin K Narwankar

Hamid Noorbakhsh

Wolfgang R Aderhold

Abhishek Dube

Mehmet Tugrul Samir

Jared Ahmad Lee

Norman L Tam

David T Blahnik

Muhannad Mustafa

Vinay K Prabhakar

Kalyanjit Ghosh

Colin John Dickinson

Shreyas Kher

Venkata Sharat Chandra Parimi

Juan Carlos Rocha

Douglas Earl Holmgren

Toshiyuki Nakagawa

Sungwon Ha

Taewan Kim

Vijaykumar Krithivasan

Matthew Spuller

Preetham P Rao

Enle Choo

Manish Hemkar

Gas distribution plate

A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

Eco-efficiency (sustainability) dashboard for semiconductor manufacturing

In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Thermal processing susceptor

Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Overlap susceptor and preheat ring

Plasma showerheads with improved gas uniformity, and a plasma showerhead with angled gas nozzles are disclosed. Also disclosed are gas nozzles having a vertical offset angle and/or a directional offset angle. None of the gas channels and/or the gas nozzles intersect with the plasma regions of the showerhead.

Plasma showerhead with improved uniformity

A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

Epitaxial deposition chamber

Processing chambers, substrate supports and thermal shields are described. A thermal shield comprises a disc-shaped body having a thickness, an outer diameter with a first edge and a second edge at opposite ends of a diameter of the disc-shaped body, a front surface and a back surface defining the thickness. The front surface has a first longitudinal region comprising the first edge and a second longitudinal region comprising the second edge. Coating one or more of the first longitudinal region or the second longitudinal region with an emissivity material (i.e., emissivity) reduces side to side temperature variation. In some embodiments, processing chambers having the thermal shield described herein consume less power than comparative processing chambers that do not include a thermal shield.

Thermal shield for processing chamber

Technologies directed to an eco-efficiency monitoring and exploration platform for semiconductor manufacturing. One method includes receiving, by a processing device, first data indicating an update to a substrate fabrication system having a first configuration of manufacturing equipment and operating to one or more process procedures. The method further includes determining, by the processing device, using the first data with a digital replica, environmental resource data. The digital replica includes a digital reproduction of the substrate fabrication system. The environmental resource usage data indicates an environment resource consumption that corresponds to performing the one or more process procedures by the substrate fabrication system incorporating the update. The method further includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

Eco-efficiency monitoring and exploration platform for semiconductor manufacturing

An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

Apparatus for temperature control in a substrate processing chamber

The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

Baffle implementation for improving bottom purge gas flow uniformity

Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

Processing system and method of delivering a reactant gas

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

Growing community of inventors

Saratoga, CA, United States of America

Kartik Bhupendra Shah