Lam Research Corporation

Novellus Systems Incorporated

Floetic LLC

Karthik Subramanian Colinjivadi

Samantha SiamHwa Tan

Shih-Ked Lee

Yongsik Yu

Eric A Hudson

George Matamis

David Wingto Cheung

Raashina Humayun

Jon Henri

Patrick A Van Cleemput

Yang Pan

Juwen Gao

Mark Naoshi Kawaguchi

Liqi Wu

Akhil N Singhal

Kapu Sirish Reddy

Kirk J Ostrowski

Jialing Yang

Huatan Qiu

Nathan Musselwhite

Kiejin Park

Francis Sloan Roberts

Arun Kumar Nallani Chakravartula

Nikkon Ghosh

Chunming Zhou

Emery Kuo

Huifeng Zheng

Todd Shroeder

Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Carbon based depositions used for critical dimension control during high aspect ratio feature etches and for forming protective layers

Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.

Metal-containing passivation for high aspect ratio etch

Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

Metal doped carbon based hard mask removal in semiconductor fabrication

A visual art piece comprises a plurality of transparent sheets, wherein at least one of the plurality of transparent sheets comprises cutouts forming an upper reservoir, a lower reservoir and a channel between the upper reservoir and the lower reservoir, wherein the cutouts are filled with a first liquid and a second liquid. The visual art piece also includes a plurality of scenery image layers depicting a natural scene, each of the plurality of scenery image layers comprising a portion of the natural scene at a different visual depth, wherein each of the plurality of scenery image layers is affixed between two of the plurality of transparent sheets. The visual art piece further includes a pump coupled to the at least one of the plurality of transparent sheets, the pump to propel the second liquid from the lower reservoir to the upper reservoir when activated, the second liquid to flow through the first liquid in the channel from the upper reservoir to the lower reservoir to visually simulate natural water movement in the natural scene.

Recreating natural water movement in visual art

A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

High density plasma etchback process for advanced metallization applications

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San Jose, CA, United States of America

Karthik Subramanian Colinjivadi