Lam Research Corporation

Karthik Sivaramakrishnan

Dennis Michael Hausmann

David W Porter

David Charles Smith

Nagraj Shankar

Kapu Sirish Reddy

Meliha Gozde Rainville

Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

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Tigard, OR, United States of America

Karthik Sivaramakrishnan