Applied Materials, Inc.

Karthik Balakrishnan

Jungrae Park

Sriskantharajah Thirunavukarasu

Eng Sheng Peh

James S Papanu

Zavier Zai Yeong Tan

Jeffrey C Hudgens

Wei-Sheng Lei

Rajkumar Thanu

Karthik Elumalai

Narayanan Ramachandran

Sai Abhinand

Arunkumar Tatti

Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

Methods and apparatus for mask patterning debris removal

Embodiments of the present disclosure include methods of determining scribing offsets in a hybrid laser scribing and plasma dicing process. In an embodiment, the method comprises forming a mask above a semiconductor wafer. In an embodiment, the semiconductor wafer comprises a plurality of dies separated from each other by streets. In an embodiment, the method further comprises patterning the mask and the semiconductor wafer with a laser scribing process. In an embodiment, the patterning provides openings in the streets. In an embodiment, the method further comprises removing the mask, and measuring scribing offsets of the openings relative to the streets.

Automatic kerf offset mapping and correction system for laser dicing

An embodiment disclosed herein includes a method of dicing a wafer comprising a plurality of integrated circuits. In an embodiment, the method comprises forming a mask above the semiconductor wafer, and patterning the mask and the semiconductor wafer with a first laser process. The method may further comprise patterning the mask and the semiconductor wafer with a second laser process, where the second laser process is different than the first laser process. In an embodiment, the method may further comprise etching the semiconductor wafer with a plasma etching process to singulate the integrated circuits.

Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach

In an embodiment, a semiconductor processing tool for implementing hybrid laser and plasma dicing of a substrate is provided. The semiconductor processing tool comprises a transfer module, where the transfer module comprises a track robot for handling the substrate, and a loadlock attached to the transfer module. In an embodiment, the loadlock comprises a linear transfer system for handling the substrate. In an embodiment, the processing tool further comprises a processing chamber attached to the loadlock, wherein the linear transfer system of the loadlock is configured to insert and remove the substrate from the processing chamber.

Mainframe-less wafer transfer platform with linear transfer system for wafer processing modules

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a uniform rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process

Methods and apparatus for detecting warpage in a substrate are provided herein. In some embodiments, a warpage detector for detecting warpage in substrates includes: one or more light sources to illuminate one or more substrates when present; a camera for capturing images of exposed portions of one or more substrates when present; a motion assembly having a mounting stage for supporting the camera; and a data acquisition interface (DAI) coupled to the camera to process substrate images and detect warpage of substrates based upon the processed substrate images.

Image based substrate mapper

Embodiments described herein generally relate to an apparatus and method of performing a robot calibration process within a substrate processing system. In one embodiment, a calibration device is used to calibrate a robot having an end effector. The calibration device includes a body, a first side and a second side opposite to the first side. The calibration device further includes a sensor disposed on the second side of the body. In some embodiments, the sensor covers the entire second side of the body. In this configuration, because the sensor covers the entire second side of the body of the calibration device, the calibration device can be utilized to sense the contact between the sensor and various differently configured chamber components found in different types of processing chambers or stations disposed within a processing system during a calibration process performed in each of the different processing chambers or stations.

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Singapore, Singapore

Karthik Balakrishnan