Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Karsten Auen

Alfred Lell

Markus Horn

Frank Singer

Herbert Brunner

Uwe Strauss

Jörg Erich Sorg

Harald König

Roland Schulz

Florian Peskoller

Roland Hüttinger

Clemens Vierheilig

Roland Enzmann

Soenke Tautz

Stephan Haneder

Andreas Rozynski

Hubert Halbritter

Thomas Schwarz

Bernhard Stojetz

Thomas Dobbertin

Andreas Wojcik

Andreas Breidenassel

Thomas Höfer

Christoph Walter

Tomasz Swietlik

Tim Böscke

Jürgen Dachs

Markus Graul

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

An optoelectronic component includes a carrier with at least two radiation sources that generate electromagnetic radiation, including a housing consisting of a material non-transmissive to the electromagnetic radiation from the radiation sources, wherein at least two openings are provided in the housing, each opening is closed with a plate, the plate consists of a material transmissive to the electromagnetic radiation from the respective radiation source, and a radiation source is respectively assigned to an opening.

Optoelectronic component having a housing with a plurality of openings

A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.

Sensor device

An arrangement includes a conversion element, an optoelectronic semiconductor component and a first carrier including a carrier plane, wherein the conversion element is arranged on the carrier plane, the optoelectronic semiconductor component emits a first electromagnetic radiation including a first beam direction and a first wavelength from a first spectral range during operation, the first electromagnetic radiation is directed onto the conversion element, the conversion element at least partly converts the first electromagnetic radiation into a second electromagnetic radiation including a second wavelength from a second spectral range, the first beam direction of the optoelectronic semiconductor component is oriented at an inclination with respect to the carrier plane, a housing including a housing cap is provided, the housing cap is configured in a hollow-body-like fashion, the housing cap and the carrier define an interior, the conversion element and the semi-conductor component are arranged in the interior, and the housing cap includes a coupling-out window that couples out the second electromagnetic radiation.

Optoelectronic arrangement

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

Laser component and method of producing it

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Method for producing a laser diode, mount and laser diode

A radiation-emitting device and a method for producing a radiation-emitting device are disclosed. In an embodiment, a radiation-emitting device comprises an optoelectronic semiconductor component and an optical element disposed downstream of the semiconductor component in an emission direction. The optical element is mechanically fixed to the semiconductor component by a clamp.

Light-emitting device including a semiconductor component and an optical element and method for manufacturing thereof

Laser diode apparatus, comprising a carrier () having a carrier top (), a laser diode chip () arranged on the carrier top () emitting, during operation, electromagnetic radiation through a radiating face (), which radiating face () runs perpendicularly to the carrier top (), and at least one optical element () to deflect at least some of the electromagnetic radiation radiated by the laser diode chip () perpendicularly to the carrier top (). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate () between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.

Laser diode apparatus

A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 &#x3bc;m is arranged between the laser diode chip and the mounting part.

Laser diode assembly

A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing.

Growing community of inventors

Wuppertal, Germany

Karsten Auen