Intel Corporation

Karson Knutson

Jack Hwang

Harold W Kennel

Sridhar Govindaraju

Aravind S Killampalli

Stephen M Cea

Mark Y Liu

Paul Davids

Rob James

Jake Jensen

An annealing method and apparatus for semiconductor manufacturing is described. The method and apparatus allows an anneal that can span a thermal budget and be tailored to a specific process and its corresponding activation energy. In some cases, the annealing method spans a timeframe from about 1 millisecond to about 1 second. An example for this annealing method includes a sub-second anneal method where a reduction in the formation of nickel pipes is achieved during salicide processing. In some cases, the method and apparatus combine the rapid heating rate of a sub-second anneal with a thermally conductive substrate to provide quick cooling for a silicon wafer. Thus, the thermal budget of the sub-second anneal methods may span the range from conventional RTP anneals to flash annealing processes (including duration of the anneal, as well as peak temperature). Other embodiments are described.

Sub-second annealing processes for semiconductor devices

Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.

Methods of forming a multilayer capping film to minimize differential heating in anneal processes

Temperature measurement using a pyrometer in a processing chamber is described. The extraneous light received by the pyrometer is reduced. In one example, a photodetector is used to measure the intensity of light within the processing chamber at a defined wavelength. A temperature circuit is used to convert the measured light intensity to a temperature signal, and a doped optical window between a heat source and a workpiece inside processing chamber is used to absorb light at the defined wavelength directed at the workpiece from the heat source.

Temperature measurement with reduced extraneous infrared in a processing chamber

A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.

Multi-zone reflecting device for use in flash lamp processes

Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed.

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Beaverton, OR, United States of America

Karson Knutson