Applied Materials, Inc.

Karrthik Parathithasan

Sriskantharajah Thirunavukarasu

Fang Jie Lim

Eng Sheng Peh

Arvind Sundarrajan

Jun-Liang Su

Chin Wei Tan

Qi Jie Peng

Puay Han Tan

Wei Jie Dickson Teo

Manorajh Arunakiri

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

Methods and apparatus for warpage correction

Embodiments of methods and apparatus for handling substrates of different sizes are provided herein. In some embodiments, an apparatus for handling substrates of different sizes includes: a pair of end effectors having a first set of contact pads configured to support a substrate having a first size and a second set of contact pads configured to support a substrate having a second size, smaller than the first size.

Apparatus for handling various sized substrates

Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.

Adhesive-less substrate bonding to carrier plate

A bridging front opening unified pod (FOUP) is provided herein. In some embodiments, the bridging FOUP includes a bottom floor, side walls, a ceiling and a back wall that forms an enclosure volume having a front opening, a plurality of supports coupled to the side walls and extending into the enclosure volume, wherein the plurality of supports are configured to support a substrate carrier, a base plate assembly comprising a base plate coupled to the bottom floor, a pair of L-brackets coupled to the base plate, wherein each L-brackets includes a short lift pin, a long lift pin coupled to the base plate, wherein the height of the short lift pins and the long lift pin is selected such that the substrate is kept level when disposed thereon, and a docking support disposed proximate the base plate assembly and configured to support a substrate carrier.

Bridging front opening unified pod (FOUP)

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Singapore, Singapore

Karrthik Parathithasan