Goldeneye, Inc.

Alliedsignal Inc.

Honeywell International Inc.

Allied Corporation

E.i. Dupont De Nemours and Company

Corning Incorporated

Simphotek, Inc.

Other

Alliesignal Inc.

Karl Wayne Beeson

Scott Moore Zimmerman

William R Livesay

Richard L Ross

Michael J McFarland

Paul Michael Ferm

Han Zou

Lawrence W Shacklette

Ivan B Steiner

Jerry W Kuper

Janpu Hou

John C Schweyen

Hefen Lin

Jose C Diaz

Chengjiu Wu

Leon Segal

Gary A West

Frederick R Hopf

John Colvin Wilson

Deepti Pant

Macrae Maxfield

Himangshu R Bhattacharjee

Evgueni Parilov

Mary J Potasek

Mac Maxfield

James T Yardley

Louay A Eldada

Keith A Horn

Arunava Gupta

Manish Sharma

George Boudoughian

Kevin Battell

Okan Tezucar

Scor M Zimmerman

Richard L Rose

Michael Foley

Scot M Zimmerman

A method of administering interstitial photodynamic therapy to a target region of a patient may include receiving information associated with the target region, an initial photosensitizer concentration, a plurality of initial photosensitizer photokinetic rate parameters, and a threshold treatment dose for a photosensitizer, the threshold treatment dose being a threshold photodynamic therapy-dose or a threshold reactive oxygen species dose. A location in the target region for inserting at least one interstitial treatment fiber to deliver the treatment light, and initial values for treatment light transmission is determined. Computational spatial elements are determined for the target region and for the location of emitting surfaces of the at least one interstitial treatment fiber, and a light fluence rate for delivering treatment light to each of the computational spatial elements. A treatment dose is determined based on the light fluence rate, the plurality of photosensitizer photokinetic rate parameters, and a photokinetic rate equation.

Interstitial photodynamic therapy

A solid-state light source has a wavelength conversion chip affixed to a light emitting diode. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.

Wavelength conversion chip for use with light emitting diodes and method for making same

Reflector designs for a large area panel light source create induced draft cooling means adjacent to the panel light source. The panel light source has a wavelength conversion element on a solid state light source for emitting light of a first and second wavelength to form a broader emission spectrum of light from the panel light source.

Fixtures for large area directional and isotropic solid state lighting panels

Flexible semiconductor devices based on flexible freestanding epitaxial elements are disclosed. The flexible freestanding epitaxial elements provide a virgin as grown epitaxy ready surface for additional growth layers. These flexible semiconductor devices have reduced stress due to the ability to flex with a radius of curvature less than 100 meters. Low radius of curvature flexing enables higher quality epitaxial growth and enables 3D device structures. Uniformity of layer formation is maintained by direct absorption of actinic radiation by the flexible freestanding epitaxial element within a reactor. In addition, standard post processing steps like lithography are enabled by the ability of the devices and elements to be flattened using a secondary support element or vacuum. Finished flexible semiconductor devices can be flexed to a radius of curvature of less than 100 meters. Nitrides, Zinc Oxides, and their alloys are preferred materials for the flexible freestanding epitaxial elements.

Flexible semiconductor devices based on flexible freestanding epitaxial elements

Thin flat crack-free freestanding nitride layers are fabricated by laser patterning of the interface and/or opposing surface of the nitride layer. The nitride layer is substantially flat once removed from the non-native substrate. The thin flat crack free nitride layers are between 3 and 250 microns thick and can have areas greater than 1 cm.

Large area thin freestanding nitride layers and their use as circuit layers

The present invention is a method, a system and a software arrangement that can be used to determine the interaction between electromagnetic radiation and a material. The invention simplifies the process of determining the interaction by separating the complex process into a plurality of simple transition modules. Each transition module is associated with at least one parameter and represents an electronic transition in the material.

Determining the interaction between electromagnetic radiation and a material by utilizing transition modules

A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

Semiconducting sheet

A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.

LED light source with thermally conductive luminescent matrix

High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.

Methods for high temperature processing of epitaxial chips

A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.

Solid-state light source

Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.

Dual sided processing and devices based on freestanding nitride and zinc oxide films

Growing community of inventors

Princeton, NJ, United States of America

Karl Wayne Beeson