Melexis Gmbh

Atmel Germany Gmbh

X-fab Semiconductor Foundries Ag

Vishay Semiconductor Gmbh

Karl-Ulrich Stahl

Alexander Kurz

Uwe Eckoldt

Matthias Eichin

Konrad Bach

Wolfgang Einbrodt

Alexander Hoelke

The aim of the invention is to configure a photodetector () such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component () is assigned to the chip face onto which the light preferably falls. Electronic circuit components () are arranged on the opposite chip face. Electrical connections () between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.

Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method

In a method for interference suppression using a quality-adjustable bandpass filter in a receiver circuit for carrier-modulated received signals (S), the bandpass filtered received signal (B) is demodulated, and a switching process is triggered with the demodulated received signal (D). In order to eliminate internal or self-induced interferences that would be caused by a switching process in the output portion of the receiver, a quality reduction of the bandpass filter is correlated with the switching process that causes the interference. The method is especially suitable in connection with circuits for infrared receivers, which can thereby be manufactured in a small size, without external components, and thus economically.

Method and arrangement for noise rejection in a receiver circuit

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Erfurt, Germany

Karl-Ulrich Stahl