Telefunken Electronic Gmbh

Karl Moser

Described is a luminescent semiconductor element having the following structure: a first thick connecting semiconductor layer of uniform material composition, a thin over-graded layer arranged on the first semiconductor layer and comprising connecting semiconductor material whose composition has a linear gradient, a further connecting semiconductor layer arranged on the over-graded layer and having uniform material composition that determines the wavelength of the radiation emitted by the luminescent semiconductor element, an active layer arranged in the surface area of the further semiconductor layer and having a conductivity opposite to that of the further semiconductor layer in order to form a p-n junction, a rear contact arranged on the first connecting semiconductor layer, and a front contact arranged on the surface of the active layer.

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Heilbronn, Germany

Karl Moser