Siltronic Ag

Karl Mangelberger

Walter Heuwieser

Michael Skrobanek

Andreas Sattler

Alexander Vollkopf

Timo Mueller

Gudrun Kissinger

Michael Gehmlich

Toni Lehmann

Sergiy Balanetskyy

Dirk Zemke

Juergen Vetterhoeffer

Jürgen VETTERHÖFFER

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5×10AT/cm(new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;

Method for producing semiconductor wafers

A crystal piece of monocrystalline silicon suitable for the production of semiconductor wafers has a length of not less than 8 cm and not more than 50 cm and a diameter of not less than 280 mm and not greater than 320 mm, wherein the fraction of the semiconductor wafers produced therefrom that are free from pinholes having a size of not more than 30 μm is greater than 98%.

Crystal piece of monocrystalline silicon

Single silicon crystals having a resistivity of ≤20 mΩcm are pulled by the Czochralski process from a melt, by a method of pulling a first section of a neck at a first velocity whereby the diameter of a first section of the neck, with respect to the diameter of a seed crystal, tapers at a rate of ≤0.3 mm per mm neck length to a diameter of not more than 5 mm;

Method for pulling a single crystal of silicon in accordance with the Czochralski method

A method produces semiconductor wafers of monocrystalline silicon. The method includes: pulling a cylindrical section of a single silicon crystal from a melt contained in a crucible, wherein the oxygen concentration in the cylindrical section is not more than 5×10atoms/cm; subjecting the melt to a horizontal magnetic field; rotating the crucible at a rotational velocity and in a rotational direction during the pulling of the cylindrical section of the single crystal; and removing the semiconductor wafers of monocrystalline silicon from the cylindrical section of the single crystal. An amount of rotational velocity, averaged over time, is less than 1 rpm and the rotational direction is changed continually and the amplitude of the rotational velocity before and after the change in the rotational direction is not less than 0.5 rpm and not more than 3.0 rpm.

Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3&#xd7;10atoms/cmand not more than 6.0&#xd7;10atoms/cm; a resistivity of the substrate wafer of not less than 5 m&#x3a9;cm and not more than 10 m&#x3a9;cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;

The invention relates to a silicon wafer having a radial variation of oxygen concentration of less than 7%, determined over the entire radius of the silicon wafer. The wafers are produced in the Pregion with rotation of crystal and crucible in the same direction, and in the presence of a horizontal magnetic field of defined intensity.

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Ach, Austria

Karl Mangelberger