Micron Technology Incorporated

Nantero, Inc.

Other

Maxim Integrated Products, Inc.

Karl M Robinson

Michael A Walker

Scott G Meikle

David L Chapek

Pai-Hung Pan

Thomas Rueckes

H Montgomery Manning

Rahul Sen

John K Skrovan

Pai Hung Pan

Ted Lyle Taylor

David A Roberts

Thomas R Bengtson

Hao-Yu Lin

Michel Pires Monteiro

Guy F Hudson

Chris C Yu

Whonchee Lee

Hugh E Stroupe

David Q Wright

Mike Walker

Manoocher Birang

Michael Tristan Andreas

Ralph N Wall

Martin Scales

A vibrating fishing lure including a vibrating mechanism adapted to be removably inserted within the body of the fishing lure. The vibrating mechanism is adapted to vibrate at chosen frequencies, patterns, and intensities depending on the water conditions present when in use and the type of fish desired to be caught. The vibrating mechanism can be controlled manually or by a remote control device which may incorporate computer applications thereon. The vibrating fishing lure and the remote control device may be used in conjunction with a fishing rod.

Vibrating fishing lure

A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

Microfluidic control surfaces using ordered nanotube fabrics

Methods for arranging nanoscopic elements within networks, fabrics and films

Methods for arranging nanotube elements within nanotube fabrics and films

Methods for arranging nanoscopic elements within networks, fabrics, and films

A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material adjacent to an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the semiconductor device. A preexisting geometry of the active region is maintained during etching of an interconnect structure hole in which the interconnect structure is formed and saves process steps. Under the method, a region of insulating material is formed immediately adjacent the active region location. A nitride layer is formed over the active region and protects the active region while an interconnect structure hole is etched partially into the region of insulating material adjacent the active region location with an etching process that is selective to the nitride layer. The interconnect structure hole is filled with polysilicon, the surface of the substrate assembly is planarized, and the nitride layer is removed.

Sacrificial self-aligned interconnect structures

A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material to the side of an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the semiconductor device. A method for making the interconnect structure maintains a preexisting geometry of the active region during etching of an interconnect structure hole in which the interconnect structure is formed and saves process steps. Under the method, a region of insulating material is formed immediately adjacent the active region location. A nitride layer is formed over the active region and protects the active region while an interconnect structure hole is etched partially into the region of insulating material adjacent the active region location with an etching process that is selective to the nitride layer. The interconnect structure hole is filled with polysilicon, the surface of the substrate assembly is planarized, and the nitride layer is removed.

Sacrificial self-aligned interconnect structure

Planarizing solutions, planarizing machines and methods for planarizing microelectronic-device substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. In one aspect of the invention, a microelectronic-device substrate assembly is planarized by abrading material from the substrate assembly using a plurality of first abrasive particles and removing material from the substrate assembly using a plurality second abrasive particles. The first abrasive particles have a first planarizing attribute, and the second abrasive particles have a second planarizing attribute. The first and second planarizing attributes are different from one another to preferably selectively remove topographical features from substrate assembly and/or selectively remove different types of material at the substrate surface.

Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies

A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.

Devices having improved capacitance

Methods, apparatuses and substrate assembly structures for mechanical and chemical-mechanical planarizing processes used in the manufacturing microelectronic-device substrate assemblies. One aspect of the invention is directed toward a method for planarizing a microelectronic-device substrate assembly by removing material from a surface of the substrate assembly, detecting a first change in drag force between the substrate assembly and a polishing pad indicating that the substrate surface is planar, and identifying a second change in drag force between the substrate assembly and the polishing pad indicating that the planar substrate surface is at the endpoint elevation. After the second change in drag force is identified, the planarization process is stopped. The first change in drag force between the substrate assembly and the planarizing medium is preferably detected by measuring a first change in the electrical current through a drive motor driving a substrate holder carrying the substrate assembly and/or a table carrying the polishing pad. The second change in drag force between the substrate assembly and the polishing pad may be identified by detecting a second change in the drive motor current or measuring a second change in the temperature of the planarizing solution or the polishing pad.

Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes

Devices having improved capacitance and methods of their fabrication

Method of making sacrificial self-aligned interconnection structure

A device and a method of forming the device are disclosed. The device includes a reflector, a first dielectric layer disposed on the reflector, and a thin film resistor disposed on the reflector. The reflector acts as a barrier between the thin film resistor and an underlying dielectric layer which may have a non-uniform thickness. Thus, the thickness control and uniformity of the dielectric layer underlying the reflector does not affect the laser trimming of the thin film resistor. In addition to serving as a barrier, the reflector reflects the trimming laser energy back towards the thin film resistor, thereby improving the efficiency of the laser trimming of the thin film resistor. Furthermore, the thickness of the first dielectric layer situated below the thin film resistor and above the reflector can be easily controlled to substantially optimize the laser trimming efficiency of the thin film resistor.

Metal trim mirror for optimized thin film resistor laser trimming

Method and apparatus for increasing chemical-mechanical-polishing (CMP) selectivity is described. A CMP pad is formed having a pattern of recesses and islands to provide non-contact portions and contact portions, respectively, with respect to contacting a substrate assembly surface to be polished. As the CMP pad is formed from a non-porous material, chemical and mechanical components of material removal are parsed to the non-contact portions and the contact portions, respectively. The relationship or spacing from one contact island to another, or, alternatively viewed, from one non-contact recess to another, provides a duty cycle, which is tailored to increase selectivity for removal of one or more materials over removal of one or more other materials during CMP of a substrate assembly.

Method and apparatus for increasing chemical-mechanical-polishing selectivity

A capacitor formed by a person using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.

Growing community of inventors

Boise, ID, United States of America

Karl M Robinson