Siliconix Incorporated

Vishay-siliconix

Karl Lichtenberger

Kyle Terrill

Kuo-In Chen

Robert Xu

Mohamed N Darwish

Deva N Pattanayak

Qufei Chen

Sharon Shi

Kam Hong Lui

Frederick Perry Giles

Christiana Yue

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches.

Super-high density trench MOSFET

In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall of the trench. The implant species is selected such that the insulating layer grows more quickly on the bottom of the trench than on the side wall of the trench, resulting in a thicker insulating layer in the bottom of the trench than on the trench side walls.

Self-aligned differential oxidation in trenches by ion implantation

Growing community of inventors

Sunnyvale, CA, United States of America

Karl Lichtenberger