Novaled Gmbh

Novaled Ag

Technische Universitát Dresden

Heliatek Gmbh

Senorics Gmbh

Osram Gmbh

Technische Universitaet Dresden

Universitat Ulm

Basf Se Corporation

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Universitaet Ulm

Karl Leo

Won Mok Kim

Bjoern Luessem

Martin Pfeiffer

Hans Kleemann

Kentaro Harada

Karsten Walzer

Alexander Zakhidov

Vadim G Lyssenko

Hartmut Fröb

Ansgar Werner

Gregor Schwartz

Maik Langner

Moritz Riede

Axel Fischer

Horst Hartmann

Christian Uhrich

Sylvio Schubert

Hans Kleeman

Frank Lindner

Jan Birnstock

Jonghee Lee

Markas Sudzius

Jan Blochwitz-Nimoth

Alrun Guenther

Markus Hummert

Uwe Vogel

Philipp Sebastian

Ulrich Denker

Lars Mueller-Meskamp

Tobias Canzler

Ulrike Bewersdorff-Sarlette

Qiang Huang

Martin Vehse

Martin Pfeiffer-Jacob

Matthias Jahnel

Karsten Fehse

Bert Maennig

Martin Oberländer

Peter Bäuerle

Sebastian Reineke

Xiang Zhou

Lars Müller-Meskamp

Johannes Benduhn

Bernhard Siegmund

Fenghong Li

Robert Gelhaar

Andreas Mischok

Matthias Kurpiers

Matteo Cucchi

Veronika Scholz

Björn Lüssem

Alexander Lee

Hsin Tseng

Donato Spoltore

Robert Brückner

Ronny Timmreck

Christian Körner

Daniel Kasemann

Till Jaegeler-Hoheisel

Tobias Schwab

Jens Drechsel

Jan Blochwitz-Niemoth

Sylvia Nicht

Bert Männig

Annette Petrich

Rico Schüppel

Kerstin Schulze

Egon Reinold

Eduard Brier

Roland Gresser

Toni Mueller

Jan Meiss

Koen Vandewal

Torsten Fritz

Ramunas Lygaitis

Reinhard Scholz

Simone Hofmann

Richard Pfeifer

Yong Hyun Kim

Lauren Polander

Olaf Zeika

Silvio Schubert

Till JÄGELER-Hoheisel

Alrun Günther

Jan Meiß

Hans Dipl-Phys Kleemann

Björn Dr-Ing Lüssem

Martin Hermenau

Selina Olthof

Christiane Falkenberg

Toni Müller

Robert Gehlhaar

The invention concerns a hybrid multispectral device comprising a substrate having a first surface and a second surface, at least one first functional element having a first functional layer operable to detect or emit light of a first wavelength range, and at least one second functional element having a second functional layer operable to detect or emit light of a second wavelength range different from the first wavelength range. The first functional element is arranged on the first surface of the substrate, while the second functional element is arranged on the second surface of the substrate. The first functional element is arranged in a first lateral region of the multispectral device, and the second functional element is arranged in a second lateral region of the multispectral device. The first lateral region and the second lateral region are arranged laterally offset from each other such that the light of the second wavelength region reaches the second functional element or the light of the second wavelength region emitted from the second functional element exits the multispectral device on the first surface of the substrate without having passed through the first functional layer.

Hybrid multispectral device

Described herein is an electronic component that may include a substrate, wherein the substrate may include at least two electrodes, wherein the at least two electrodes are each spaced apart from each other on and/or within the substrate. When the electronic component is in a first operating state, an electrolytic material may be disposed at least in a spatial region between the at least two electrodes, wherein the electrolytic material comprises at least one polymerizable material. When the electronic device is in a second operating state, at least one electrical connection may be made between the at least two electrodes, wherein the at least one electrical connection comprises an electrically conductive polymer. The electrically conductive polymer may comprise one or more fiber structures, wherein the one or more fiber structures are in physical contact with the at least two electrodes.

Electronic component and method of operating an electronic component

An optoelectronic component on a substrate includes a first and a second electrode. The first electrode is arranged on the substrate and the second electrode forms a counter electrode. At least one photoactive layer system is arranged between these electrodes. The at least one photoactive layer system including at least one donor-acceptor system having organic materials.

Transparent electrode for optoelectronic components

A method for detecting infrared electromagnetic radiation and for converting same into an electrical signal, an optoelectronic component, in particular an organic infrared detector for (near) infrared detection, and use thereof for detecting an electromagnetic signal in the wavelength range of 780 nm to 10 &#x3bc;m, are provided.

Method for detecting and converting infrared electromagnetic radiation

Electronic and optoelectronic devices are provided that may include at least one inorganic surface covered at least partly by an organic layer. The organic layer may include a compound having at least one anchor group anchoring the compound to the inorganic surface, at least one functional moiety, and at least one methylidenyl group. Compounds and methods for manufacturing electronic and optoelectronic devices also are provided.

Electronic or optoelectronic device comprising an anchored thin molecular layer, process for its preparation and compound used therein

Apparatus for spectrometrically capturing light includes a wavelength-adjustable filter for converting spectral information into location information and an organic photodiode for converting the location information into electrical signals which can be forwarded, wherein the filter and the organic photodiode form a one-piece monolith, the organic photodiode is connected to the filter or the organic photodiode is integrated in the filter, the filter consists of at least one spectrally resolving element in the form of at least one layer-like photonic crystal which constitutes the monolith and in which two layers of variable thickness D are formed along a direction perpendicular to the incidence of light. A resonant layer is arranged between the two layers. The organic photodiode includes: a photoactive layer, a first electrode, and a second electrode sandwiching the photoactive layer, and one of the electrodes is in contact with the photonic crystal.

Apparatus for spectrometrically capturing light with a photodiode which is monolithically integrated in the layer structure of a wavelength-selective filter

The application relates to a vertical organic transistor having a layer structure on a substrate. The layer structure includes an electrode, a counter-electrode, and an electronically active layer arrangement which is disposed between the electrode and the counter-electrode. The application further relates to a method for fabricating a vertical organic transistor and a circuit arrangement.

Vertical organic transistor, circuit configuration and arrangement with vertical organic transistors and method of manufacturing

A direction-selective interferometric optical filter for spectrometric devices, at least includes an arrangement of two layered one-dimensional photonic structures. Each of the two structures contains a defect layer, and each photonic structure has a dispersion function in the energy momentum space (E, kx, ky), wherein kx and ky are momentum components of transmitted photons of the photonic structures for a defined energy (frequency/wavelength) E in the energy momentum space. Both photonic structures have opposite interfaces which are at a plane-parallel distance from one another. In this case, the dispersion functions of both photonic structures cross or intersect in the energy momentum space and produce a cut set of rays of waves on the surfaces of the dispersion functions at a particular energy, wherein a ray of waves contains waves selectively chosen through the filter at an angle, while other waves are reflected by the filter at other angles.

Direction-selective interferometric optical filter

An optical filter element for devices for converting spectral information into location information, uses a connected detector for detecting signals. The element has at least two microresonators, each comprising at least two superposed reflective layer structures of a material layer having a high refractive index and a material layer having a low refractive index in an alternating sequence, and at least one superposed resonance layer arranged between the two superposed reflective layer structures. The filter element comprises at least one transparent plane-parallel substrate for optically decoupling the two microresonators; the first microresonator being located on a first of two opposing surfaces of said substrate, and the second microresonator being located on said substrate on a second surface thereof that lies opposite the first surface. The resonance layer of at least one microresonator, and/or the reflective layer structure that surrounds said resonance layer, has a layer thickness which can vary along a horizontal axis of said filter element.

Optical filter element for devices for converting spectral information into location information

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Method for producing an organic field effect transistor and an organic field effect transistor

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Organic field effect transistor and method for producing the same

The disclosure provides a method of manufacturing an organic electronic device, including providing a layered device structure, the layered device structure including a plurality of electrodes and an electronically active region, said providing of the layered device structure including steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.

Method for manufacturing an organic electronic device and organic electronic device

The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.

The invention relates to a vertical organic transistor on a substrate having an electrode, a counter electrode and a layer arrangement which is arranged between the electrode and the counter electrode, wherein the layer arrangement is formed with the following layers: a central electrode, an organic layer made up of organic semiconductor material which is arranged between the central electrode and the electrode, a further organic layer made up of organic semiconductor material, which is arranged between the central electrode and the counter electrode, and a doping layer which is arranged between the central electrode and the electrode. Furthermore, the invention relates to a method for producing a vertical organic transistor.

Vertical organic transistor and production method

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Dresden, Germany

Karl Leo