Infineon Technologies Ag

U-l-m Photonics Gmbh

Siemens Aktiengesellschaft

Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Karl Joachim Ebeling

Martin Rudolf Behringer

Johann Luft

Bruno Acklin

Werner Späth

Karl-Heinz Schlereth

Christian Hanke

Zeljko Spika

Thomas Knödl

Jörg Heerlein

Lutz Korte

Thomas KNÖDL

A vertical laser diode includes a vertical resonator and a device for shaping the beam profile of the laser diode. The shaping device has at least one decoloring absorber. The configuration provide a vertical laser diode structure that permits stable beam profile shaping.

Vertical laser diode with means for beam profile forming

The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (). A first diode laser () is arranged on the substrate (), and a second diode laser () is arranged on the first diode laser (). Between the first diode laser () and the second diode laser () there is a contact layer (). The contact layer () comprises a first conductive layer () of a first conduction type and a second conductive layer () of a second conduction type and an interlayer () which is arranged between the first and second conductive layers ().

Stacked semiconductor laser diode

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

A semiconductor laser ( ) comprises, in succession, a first reflector ( ), a first optically active region ( ), which can emit light of a first wavelength (&lgr; ), a second reflector ( ), a second optically active region ( ), which can emit light of a second wavelength (&lgr; ), which is shorter than the first wavelength (&lgr; ), and a third reflector ( ), wherein the two optically active regions ( ) are able to emit their light on a common optical axis ( ) in a common emission direction ( ).

Semiconductor laser

An oxide-confined vertical cavity surface emitting laser having reduced parasitic capacitance. The VCSEL includes a substrate having a first mirror stack grown epitaxially thereon. The first mirror stack includes a plurality of semiconductor layers and is doped with a first doping type. An active region is grown epitaxially above the first mirror stack for generating a lasing emission. A control layer is grown epitaxially above the first mirror stack, between first mirror stack and the active region or above the active region, and includes a central non-oxidized conducting portion and an outer, laterally oxidized insulating portion. A second mirror stack is grown epitaxially above the active region and the control layer. The second mirror stack includes a second plurality of semiconductor layers doped with a second doping type. The second plurality of semiconductors layers includes pairs of high index and low index materials. The low index material layers are generally equally laterally oxidized and have a non-oxidized central portion. The penetration of the lateral oxidation of the low index material layers is less than the oxidation penetration for the outer laterally oxidized insulating portion of the control layer.

Vertical cavity surface emitting laser with reduced parasitic capacitance

An optoelectronic device having a highly conductive carrier tunneling current aperture. The device includes a centrally positioned current aperture formed from a quantum layer made of a III-IV-V semiconductor compound, which is doped with a first doping type. The current aperture is laterally confined by an oxide of the III-IV-V semiconductor compound. Adjacent layers are also formed of a semiconductor material that is doped with the first doping type.

Optoelectronic device having a highly conductive carrier tunneling current aperture

The radiation emitting optoelectronic component has a radiation generating body with a planar optical waveguide and a wave guiding layer. The wave guiding layer has a radiation generating zone in which electromagnetic radiation is generated while the component is operating. The planar optical waveguide has at least one lateral output taper for outputting the radiation from the waveguide.

Optoelectronic component emitting incoherent radiation

Semiconductor laser chip, whereby a laser-active semiconductor structure is arranged in an optical resonator. Two or more series-connected, laser-active pn-junctions whose forward directions are isodirected are introduced into one and the same resonator of the semiconductor laser chip. A respective pn-junction whose forward direction is opposite the forward direction of the laser-active pn-junctions is arranged between two laser-active pn-junctions.

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Munich, Germany

Karl Joachim Ebeling