Siemens Aktiengesellschaft

Karl-Heinz Zschauer

Wolfgang Endler

Dieter Pawlik

Heinz Splittgerber

A multi-layer laser diode structure comprised of a semiconductor material, for example, gallium-aluminum-arsenide, having varying amounts of a dopant, such as aluminum, in the respective layers, includes a cover layer which is transparent to laser radiation and provided for total reflection of radiation generated in a laser-active layer positioned below the cover layer and an additional layer positioned on top of the cover layer and supporting a contact on its exterior surface. The additional layer is composed of a semiconductor material having a band gap which is greater by at least 2 kT relative to that of the material forming the laser-active layer. The exterior surface of the additional layer is substantially specularly smooth for radiation generated in the laser-active layer. Non-destructive testing of quality factors decisive for a completed laser diode can occur with this type of construction.

Laser diode

A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the lower region of an epitaxy solution chamber is clad with a substrate material so as to displace the location of the bead growth away from the actual substrate and toward the region of the cladding. This process is useful for producing GaAs-(Ga, Al) As and (Ga, In) (As, P) mixed crystal layers for luminescent diodes and laser diodes.

Process for producing epitaxial semiconductor material layers on

A method for manufacturing a semiconductor structure, especially for optoelectronic components, in which, at least one layer of a further semiconductor compound is deposited epitaxially on a substrate of a semiconductor compound. The surface of the substrate is provided with a multiplicity of bevelled structures of the further semiconductor compound. Prior to deposition, the surface of the substrate is provided with a multiplicity of mesas in a predetermined distribution, from each of which a bevelled structure is then generated. The plane and fault-free crystal surface of the bevels is preserved when further layers are deposited. The method is especially well suited for the manufacture of optoelectronic and microwave components.

Method for manufacturing a semiconductor structure

A process or method for the production of epitaxial layers on a monocrystalline substrate by moving a melt on a surface of the substrate, depositing the layer and then removing the remaining melt from the substrate characterized by the substrate being a crystal having two boundary edges, which are parallel to one another and in which no preferred edge growth occurs in a direction running at right angles to the boundary edges and pointing outward from the interior of the substrate crystal so that no portion of the melt will be retained as the melt is being removed after forming the layer.

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Grafing, Germany

Karl-Heinz Zschauer