Siemens Aktiengesellschaft

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Karl-Heinz Sommer

Reinhold Spanke

Gerhard Schulze

Heinrich Schlangenotto

Walter Springmann

Gyoergy Papp

Peter Zwanziger

Franz Kaussen

A power diode includes at least one semiconductor body having an inner zone f a first conductivity type and a given doping level, a cathode zone of the first conductivity type and a doping level higher than the given doping level, and an anode zone of a second conductivity type opposite the first conductivity type and a doping level higher than the given doping level. The inner zone has at least a first region with a first predetermined thickness being dimensioned for a required blocking voltage and a second region with a second thickness being greater than the first predetermined thickness by at least a factor of 1.4. The area and/or the minority carrier life of first and second partial diodes is dimensioned for causing a current flowing through the first partial diode in a conductive phase to be greater than a current flowing through the second partial diode by at least a factor of 2.

Power diode

A bridge module includes at least two bridge branches. At least two respective controllable semiconductor switches are provided for each of the bridge branches. Electrically insulating and thermally conductive substrates have conductor tracks and are connected to a metal base plate. The semiconductor switches are electrically conductively mounted on the substrates. A housing has at least two AC terminals and four DC terminals. AC connection leads are connected to the AC terminals and to the semiconductor switches. DC connection leads are connected to the DC terminals and to the semiconductor switches. Each of the bridge branches has two of the DC connection leads and two of the DC terminals. All of the DC terminals of one and the same polarity are connectable to one another by leads being adjacent one another and disposed outside the housing.

Bridge module

A plurality of semiconductor arrangements arranged on interconnects are cected parallel to one another in a module. The arrangements lie opposite one another in pairs. At least one pair and at most two pairs of semiconductor arrangements are arranged to follow one another in the direction of an axis of the module and are further connected to lead conductors. Positions of the lead conductors with respect to the contacted semiconductor arrangements are the same for each pair of semiconductor arrangements or, respectively, two respective pairs of semiconductor arrangements. Corresponding lead conductors are connected to one another above the interconnects.

Power semiconductor module having a plurality of semiconductor

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Warstein, Germany

Karl-Heinz Sommer