Infineon Technologies Ag

Osram Gmbh

Osram Opto Semiconductors Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Karl-Heinz Schlereth

Norbert Stath

Georg Bogner

Axel Schubert

Ernst Nirschl

Bruno Acklin

Raimund Oberschmid

Olaf Schoenfeld

Gerald Neumann

Siegmar Kugler

Martin Rudolf Behringer

Hans-Ludwig Althaus

Joachim Reill

Johann Luft

Karl Joachim Ebeling

Werner Späth

Christian Hanke

Harald Böttner

Gustav Müller

Zeljko Spika

Jörg Heerlein

Lutz Korte

Harald Boettner

Volker H&auml;rle

The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance LED chip and a method for producing same

The invention concerns a light-emitting diode chip () comprising a radiation-emitting active region () and a window layer (). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region () is smaller than the cross-sectional area of the window layer () available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance led chip and a method for producing same

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.

Semiconductor component

Method for fabricating a thermoelectric converter having a plurality of series-connected thermoelement cells, which are connected in series with one another by means of a plurality of first electrical conductor tracks ( ) and each of which has a first body ( ) made of thermoelectric material of a first conduction type and a second body ( ) made of thermoelectric material of a second conduction type. The thermoelement cells are fabricated by means of method steps appertaining to semiconductor technology.

Process for producing a thermoelectric converter

An optical for wavelength reference measurement has in essence an optical conductor with integrated fiber Bragg grating that has a transmission maximum at a desired wavelength. Arranged downstream of the fiber Bragg grating is a photoreceiver receiving the measuring radiation beam passing through the fiber Bragg grating. If desired, it is possible to use a beam splitter to produce a reference radiation beam that is detected in a further photoreceiver.

Optical module for wavelength reference measurement in WDM systems

A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.

LED white light source with broadband excitation

The invention relates to a semiconductor chip having a fracture sidewall ( ) running at a lateral edge region, and having an electrically active layer ( ) ending at the fracture sidewall, in which case at least one fracture-sidewall section which is assigned to the end of the active layer is provided with a passivation layer ( ) covering said section. The invention furthermore relates to a method for fabricating such a semiconductor chip.

Semiconductor chip and method for the production thereof

Growing community of inventors

Burglengenfeld, Germany

Karl-Heinz Schlereth