Disco Corporation

Denka Company Limited

Karl Heinz Priewasser

Takeshi Saito

Tomoya Tsukui

Tomoyuki Kanai

Hiroshi Morikazu

Kazuya Hirata

Yoko Nishino

Provided is an adhesive sheet for backgrinding which enables sufficient backgrinding while protecting protrusions provided on a semiconductor wafer. The present invention provides an adhesive sheet for the backgrinding of a semiconductor wafer that has protrusions, said adhesive sheet being characterized by comprising a non-adhesive cushion layer and an adhesive layer provided on the cushion layer, with a curable resin and a support film being layered on the cushion layer side for use, wherein the viscosity of the curable resin prior to curing is 100-3000 mPa·s, the Shore D hardness of the curable resin layer subsequent to curing is 5-72, and at least one of conditions (1) and (2) is satisfied. (1) When punched in the shape of a dumbbell in accordance with JIS Z1702 and stretched by 25% at a tensioning speed of 300 mm/min with a gauge length of 40 mm, the cushion layer has a tensile stress of 2-30 N/10 mm. (2) The cushion layer is composed of a thermoplastic resin that has a melting point of 60-110° C. and a melt flow rate (JIS K7210, 125° C./10.0 kg load) of 0.2-30 g/10 min.

Adhesive sheet for backgrinding and production method for semiconductor wafer

Provided is a back grinding adhesive sheet which can adequately protect protrusions provided to a semiconductor wafer, and with which back grinding can be adequately performed. The present invention provides a back grinding adhesive sheet for a semiconductor wafer having protrusions, the back grinding adhesive sheet comprising a non-adhesive cushion layer, and an adhesive layer provided on the cushion layer. The adhesive layer has an opening with a smaller diameter than the diameter of the semiconductor wafer, and the outer edge of the semiconductor wafer is adhered to the adhesive layer such that the protrusions on the semiconductor wafer are positioned inside the opening. The protrusions are protected by the cushion layer when the semiconductor wafer is in the state of being adhered to the adhesive layer. The adhesive sheet satisfies at least one of the following conditions (1)-(2). (1) When the cushion layer is cut out using the dumbbell from JISZ1702 and is stretched 25% at a gauge length of 40 mm and a tensile speed of 300 mm/min, the tensile stress is 2-30N/10 mm. (2) The cushion layer is formed from a thermoplastic resin that has a melt flow rate (JISK7210, 125° C./10.0 kg load) of 0.2-30 g/10 min, and a melting point of 60-110° C.

Back grinding adhesive sheet, and method for manufacturing semiconductor wafer

Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes an annular groove forming step of forming an annular groove on the second surface of the SiC substrate in an annular area corresponding to the boundary between a device area and a peripheral marginal area in the condition where a thickness corresponding to the finished thickness of the wafer after thinning is left, and a separation start point forming step of applying the laser beam to the second surface as relatively moving a focal point and the SiC substrate to thereby form a modified layer and cracks inside the SiC substrate at the predetermined depth.

Wafer thinning method

Growing community of inventors

Kirchheim b. Muenchen, Japan

Karl Heinz Priewasser