Licentia Patent-verwaltungs Gmbh

Karl-Heinz Kassel

Hartmut Dulken

Gottfried Guder

Manfred Lutz

Hubert Walsdorfer

Hans-Hermann Beschoner

Josef Stuke

Wolf Glowinski

Johannes Berle

In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.

Method for producing an electrophotographic recording material having

In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.

Tellurium layer allows vapor deposition of crystalline selenium thereon

An electrophotographic image carrier is made by depositing an intermediate layer on an electrically conductive substrate and then vapor-depositing, on the intermediate layer, an inorganic photoconductive layer while maintaining the temperature of the substrate during the deposition of the photoconductive layer at a value which is above the melting point of the intermediate layer, but below the damaging temperature of the photoconductive layer.

Vapor deposition of photoconductive selenium onto a metallic substrate

An electrophotographic recording material comprises a photoconductive layer of selenium, selenium compounds, or alloys with selenium, a conductive and flexible substrate, and an intermediate layer between the substrate and photoconductive layer, the intermediate layer being a metal having a modulus of elasticity of less than 6000 kp/mm.sup.2 and a recrystallization temperature of less than 40.degree. C.

Electrophotographic recording material and its method of manufacture

In the fabrication of an electrophotographic recording material of the type composed of selenium, selenium compounds, or alloys with selenium, the method is simplified by initially vapor-depositing the photoconductive recording material onto a carrier at a temperature below the glass transformation temperature, and then heating the recording material to a higher second temperature range between the glass transformation temperature and a temperature just below that at which the electrophotographic properties of the recording material begin to change.

Method for producing an electrophotographic recording material

In the fabrication of an electrophotographic recording material composed of a photoconductive layer of selenium, at least one selenium alloy, or at least one selenium compound applied to a conductive substrate, the quality and durability of the bond between the layer and the substrate is improved by initially vapor-depositing a thin layer of the photoconductive substance while the substrate temperature is above the glass transformation temperature of the substance, and then vapor-depositing the remainder of the intended layer at a substantially lower substrate temperature.

Electrophotographic recording material composed of a layer of selenium, selenium alloys, or selenium compounds, with arsenic as a additive, disposed on a conductive carrier is given improved properties by forming the layer to have a total arsenic content of 1 to 20%, by weight, and a concentration gradient such that the arsenic concentration decreases from the exposed surface of the layer in the direction toward the carrier and has a concentration of at least 13% at the exposed surface of the layer.

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Karl-Heinz Kassel