Siemens Aktiengesellschaft

Karl Fleisch

Roland Weiss

Ingolf Hoffmann

Abderrahim Chahid

Roland Humpfner

Alexander Itzke

Detlef Boldin

Anja Schnieders

Florian Zapf

Karl-Heinz Buttner

Various embodiments of the teachings herein include an apparatus for measuring a magnetic field of a conductor of an electric current. The apparatus may include three magnetic field sensors arranged on a circumference of a non-circular ellipse defined by parallel projection or orthogonal projection of a circle. Three first positions are arranged equidistantly on a circumference of the circle. The three first positions emerge from the parallel projection or the orthogonal projection onto at least three second positions on the ellipse. The three magnetic field sensors are arranged at the three second positions. The magnetic field is measured without using a flux concentrator.

Projection distribution of magnetic field sensors for measuring a magnetic field of a conductor of an electric current

A current measuring device for generating an output current proportional to a current to be measured includes at least two Hall sensors arranged on a circular path and oriented identically in relation to a center point. The current measuring device includes an adding circuit summing measurement signals of the Hall sensors, a subtracting circuit for eliminating an offset, a voltage-controlled current source, and a current supply with a toroidal coil having a paramagnetic and/or diamagnetic core and a DC/DC converter supplying the Hall sensors. In a method for measuring a current, a current measuring device has an adding circuit for adding the measurement signals of the Hall sensors and generating a voltage proportional to the current to be measured. An offset of the voltage is subtracted by a subtracting circuit, generating an output current with a predefined transformation ratio relative to the measured current.

Current measuring device with hall sensors

In a method for actuating reverse-conducting semiconductor switches, a plurality of reverse-conducting semiconductor switches is arranged in a parallel circuit. Gate contacts of switching elements of at least two of the plurality of reverse-conducting semiconductor switches are controlled by actuating the at least two of the reverse-conducting semiconductor switches at least intermittently with different voltages, thereby allowing to influence a behavior of the switching elements of the at least two of the reverse-conducting semiconductor switches in IGBT (Insulated-Gate-Bipolar-Transistor) and a behavior in diode mode.

Method for actuating reverse-conducting semiconductor switches arranged in parallel

No-break power supply

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Erlangen, Germany

Karl Fleisch