Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Karl Engl

Markus Maute

Patrick Rode

Lutz Hoeppel

Berthold Hahn

Matthias Sabathil

Lutz Höppel

Johannes Baur

Martin Strassburg

Jürgen Moosburger

Joachim Hertkorn

Andreas Weimar

Norwin Von Malm

Thomas Schwarz

Korbinian Perzlmaier

Klaus Streubel

Frank Singer

Siegfried Herrmann

Christian Leirer

Hubert Halbritter

Peter Brick

Volker Härle

Christoph Eichler

Georg Bogner

Stefan Illek

Markus Heinrich Klein

Erwin Lang

Tony Albrecht

Reiner Windisch

Karsten Diekmann

Matthias Peter

Stefanie Rammelsberger

Sebastian Taeger

Robert Walter

Johann Eibl

Tetsuya Taki

Anna Kasprzak-Zablocka

Volker Haerle

Michael Huber

Johannes Stocker

Alexander Martin

Guido Weiss

Kai Gehrke

Georg Hartung

Andreas Ploessl

Tobias Meyer

Marc Philippens

Andreas Biebersdorf

Petrus Sundgren

Hans-Jürgen Lugauer

Christoph Klemp

Ines Pietzonka

Simeon Katz

Laura Kreiner

Lorenzo Zini

Simon Schwalenberg

Michael Brandl

Roland Zeisel

Juergen Moosburger

Nikolaus Gmeinwieser

Christine Rafael

Andreas Leber

Jean-Jacques Drolet

Julia Stolz

Felix Feix

Ana Kanevce

Christian Berger

Tamas Lamfalusi

Martin Welzel

Bjoern Muermann

Rainer Hartmann

Christian Eichinger

Xue Wang

Nicole Heitzer

Eva-Maria Rummel

Marie Assmann

Andreas Rausch

Markus Klein

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

An arrangement includes at least two modules for a video wall including light-emitting components arranged on a carrier, wherein a drive circuit that selectively drives the component at the carrier is provided for each component, row lines and column lines are provided, each drive circuit connects to a row line and a column line, each drive circuit connects to power supply lines, the carrier includes plated-through holes that guide the row lines and the column lines onto an underside of the carrier, the two modules are arranged on a further carrier, the further carrier includes at least one recess, an electrical connector is arranged in the recess, and the electrical connector connects column lines and/or row lines of the two modules to one another.

Modular module

A module for a video wall includes a plurality of light-emitting components; and a carrier including conduction regions, wherein the light-emitting components each include a top side including a top-side contact and an underside including an underside contact, the light-emitting components are configured to emit electromagnetic radiation via the top side, the underside contacts of the light-emitting components electrically conductively connect to the conduction regions, the top-side contacts electrically contact a conductive layer, the light-emitting components each include at least four light-emitting semiconductor chips, the light-emitting semiconductor chips within a light-emitting component interconnect in parallel with one another, the light-emitting semiconductor chips within a light-emitting component each electrically conductively connect to the top-side contacts and the underside contacts of the light-emitting component, a plurality of adjacent light-emitting components constitute a cluster, and the light-emitting semiconductor chips of the light-emitting components of a cluster includes an identical nominal wavelength.

Module for a video wall, and method of producing same

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

Described is an optoelectronic semiconductor chip () with a built-in bridging element (A) for overvoltage protection.

Optoelectronic semiconductor chip with built-in ESD protection

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Optoelectronic semiconductor chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Light emitting diode chip

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips

An electrical contact structure () for a semiconductor component () is specified, comprising a transparent electrically conductive contact layer (), on which a first metallic contact layer () is applied, a second metallic contact layer (), which completely covers the first metallic contact layer (), and a separating layer (), which is arranged between the transparent electrically conductive contact layer () and the second metallic contact layer () and which separates the second metallic contact layer () from the transparent electrically conductive contact layer (). Furthermore, a semiconductor component () comprising a contact structure () is specified.

Electrical contact structure for a semiconductor component, and semiconductor component

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Optoelectronic semiconductor chip and optoelectronic component

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 &#x3bc;m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.

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Pentling, Germany

Karl Engl