Advanced Technology Materials, Inc.

International Business Machines Corporation

Entegris, Inc.

Karl E Boggs

Michael S Darsillo

Emanuel Israel Cooper

Peng Zhang

Jeffrey A Barnes

Jun Liu

Peter Wrschka

Thomas H Baum

Steven M Bilodeau

William Francis Landers

Mackenzie E King

Kenneth M Davis

David Angst

Prerna Sonthalia

Jeffrey F Roeder

Joseph D Sweeney

Jose I Arno

J Donald Carruthers

Luping Wang

Jeremy K Stephens

Peng Zou

Adam D Ticknor

Michael L Passow

Shaun M Wilson

Paul J Marganski

Brian Bobita

Douglas Edwards

Ali Afzali-Ardakani

Glenn M Tom

John Anthony Fitzsimmons

Kwong Hon Wong

Tianniu Chen

Michael F Lofaro

Mahmoud M Khojasteh

Nicholas C M Fuller

Uldis Artis Ziemins

Brian L Benac

Michael B Korzenski

David Daniel Bernhard

Matthew Kusz

George Gabriel Totir

Melissa A Petruska

Maria Ronay

Jennifer V Muncy

Chenting Lin

James J Welch

Richard D Chism

Ping Jiang

Florian Schnabel

Greg Nelson

Robert Ploessl

Ronald D Fiege

Leonard C Stevens, Jr

Kim Van Berkel

George Mirth

Robert M Merkling, Jr

Joseph Patrick Menning

Wei Liu

Richard Chism

Lin Feng

Joachim F Nuetzel

Xiaodong Yan

Michael W Owens

James L Simpson

Raphael Mitchell

Dongyun Lee

Kanghyun Kim

Jeffrey Barnes

Tom Baum

Matt Kusz

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Antioxidants for post-CMP cleaning formulations

The present disclosure relates to a blow-molded, rigid collapsible liner that can be suitable particularly for smaller storage and dispensing systems. The rigid collapsible liner may be a stand-alone liner, e.g., used without an outer container, and may be dispensed from a fixed pressure dispensing can. Folds in the rigid collapsible liner may be substantially eliminated, thereby substantially reducing or eliminating the problems associated with pinholes, weld tears, and overflow. The present disclosure also relates to flexible gusseted or non-gusseted liners, which is scalable in size and may be used for storage of up to 200 L or more. The flexible gusseted liner may be foldable, such that the liner can be introduced into a dispensing can. The liner can be made of thicker materials, substantially reducing or eliminating the problems associated pinholes, and may include more robust welds, substantially reducing or eliminating the problems associated weld tears.

Substantially rigid collapsible liner and flexible gusseted or non-gusseted liners and methods of manufacturing the same and methods for limiting choke-off in liners

An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

Component for solar adsorption refrigeration system and method of making such component

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Copper cleaning and protection formulations

Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Lithographic tool in situ clean formulations

An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

Aqueous cerium-containing solution having an extended bath lifetime for removing mask material

An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

High throughput chemical mechanical polishing composition for metal film planarization

A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.

Method of passivating chemical mechanical polishing compositions for copper film planarization processes

A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.

Chemical mechanical polishing compositions for copper and associated materials and method of using same

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

Passivative chemical mechanical polishing composition for copper film planarization

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

A method and structure polishes and cleans silicon wafers by mixing a marker with a slurry to form a slurry mixture, performs chemical mechanical polishing on a silicon wafer using the slurry mixture, rinses the slurry mixture from the silicon wafer, checks the silicon wafer for marker residue, and repeats the rinsing process if the checking process detects the marker residue on the wafer.

CMP slurry additive for foreign matter detection

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Poughkeepsie, NY, United States of America

Karl E Boggs