National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

Varioscale, Inc.

Karl Douglas Greth

Michael David Henry

Randy J Shul

Robert K Grubbs

David P Adams

Ronald S Goeke

Jeffrey Stevens

V Carter Hodges

Kira L Fishgrab

Jeffry Joseph Sniegowski

Roy H Olsson

Travis Ryan Young

James E Stevens

Gregory Paul Salazar

Janet Nguyen

Craig Y Nakakura

John Mudrick

Michael J Rye

Caitlin Rochford Friedman

Scott Silverman

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Plasma-based method for delayering of circuits

The present invention relates to a lateral via to provide an electrical connection to a buried conductor. In one instance, the buried conductor is a through via that extends along a first dimension, and the lateral via extends along a second dimension that is generally orthogonal to the first dimension. In another instance, the second dimension is oblique to the first dimension. Components having such lateral vias, as well as methods for creating such lateral vias are described herein.

Lateral vias for connections to buried microconductors and methods thereof

Lateral vias for connections to buried microconductors

A micromechanical resonator is disclosed. The resonator includes a resonant micromechanical element. A film of annealable material can be deposited on a facial surface of the element. The resonance of the element can be tuned by annealing the deposited film. Also disclosed are methods of applying a film on a resonator and annealing the film, thereby tuning one or more resonant properties of the resonator.

Tuning method for microresonators and microresonators made thereby

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Albuquerque, NM, United States of America

Karl Douglas Greth