Corning Incorporated

University of Rochester

Rochester Institute of Technology

Betabatt, Inc.

Karl D Hirschman

Robert George Manley

Larry L Gadeken

Philippe M Fauchet

Tarun Mudgal

Wei Sun

Nazir P Kherani

A method of making polycrystalline silicon (p-Si), including: depositing amorphous silicon to produce an amorphous silicon super-mesa; dehydrogenating the amorphous silicon; patterning the super-mesa to produce a patterned substrate; depositing a capping oxide layer on the amorphous silicon on the patterned substrate; heating the capped, patterned substrate to the crystallization temperature of the a-Si; and flash lamp annealing the patterned substrate with a xenon lamp to produce p-Si having at least one super-mesa, and the super-mesa having supersized grains. Also disclosed are p-Si articles and devices incorporating the articles, and an apparatus for making the p-Si articles.

Flash-lamp annealing method of making polycrystalline silicon

A method of making an energy conversion device includes forming a plurality of pores within a substrate and forming a junction region within each of the plurality of pores. Each of the junction regions has a depletion region and each of the plurality of pores defines an opening size in the substrate and a spacing from adjacent pores so that the depletion regions of each of the pores is at least substantially in contact with the depletion region of the pores which are adjacent.

Methods of making energy conversion devices with a substantially contiguous depletion regions

Growing community of inventors

Henrietta, NY, United States of America

Karl D Hirschman