Novellus Systems Incorporated

Applied Materials, Inc.

Other

Karl B Levy

Kaihan Abidi Ashtiani

Kwok Fai Lai

Larry D Hartsough

Joshua Collins

Juwen Gao

Lana Hiului Chan

Junghwan Sung

Andrew L Nordquist

Michal Danek

Erich R Klawuhn

Maximilian Albert Biberger

Raashina Humayun

Feng Chen

James A Fair

Panya Wongsenakhum

Craig Lyle Stevens

Aaron R Fellis

Mukul Khosla

Robert Martinson

J Patrick Rymer

Robert T Rozbicki

Dhairya Shrivastava

Jonathan David Reid

Stephen E Savas

Eliot K Broadbent

Ronald Allan Powell

Sang-Hyeob Lee

Thomas R Omstead

Richard S Hill

Peter R Hanley

Kevin Donohoe

Neeta Jha

Hyoun S Choe

Kenneth K Barber

Mark Fissel

Soo Yun Joh

Michael Meyers

Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.

Methods for forming all tungsten contacts and lines

Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

Method for improving uniformity and adhesion of low resistivity tungsten film

A semiconductor wafer processing system in accordance with an embodiment of the present invention includes a loading station, a load lock, a process module, an intermediate process module, and a transport module which further includes a load chamber, a transfer chamber, and a pass-through chamber between the load chamber and the transfer chamber. The intermediate process module may be coupled to the load chamber, or both the load chamber and the transfer chamber. In one embodiment, the load lock is a single-wafer load lock capable of accommodating only a single wafer at a time to allow for fast pump down and vent cycles. In one embodiment, the pass-through chamber is configured as a cooling station to improve throughput for processes that require the wafer to be cooled in-between depositions, for example.

Architecture for high throughput semiconductor processing applications

Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

Deposition of tungsten nitride

Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.

Method of forming low-resistivity tungsten interconnects

A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

Method for reducing tungsten film roughness and improving step coverage

A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about &#x2212;70&#xb0; C. to about 0&#xb0; C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing

Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A rapid rotary switching of the process gases eliminates having to divert the process gases to a system vent and provides for atomic layer film growth sufficient for high-volume production applications. Conventional chemical vapor deposition can also be performed concurrently with atomic layer deposition within the multi-wafer sequential processing chamber.

Atomic layer deposition systems and methods

The present invention pertains to systems and methods for passivating the copper seed layer deposited in Damascene integrated circuit manufacturing. More specifically, the invention pertains to systems and methods for depositing the copper seed layer by physical vapor deposition, while passivating the copper during or immediately after the deposition in order to prevent excessive oxidation of the copper. The invention is applicable to dual Damascene processing.

Passivation of copper in dual damascene metalization

A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about &minus;70&deg; C. to about 0&deg; C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing

Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor device. In a preferred embodiment, the diffusion barrier is formed by depositing a film of binary transition metal nitride then treating the film in a gas containing silicon in order to form a layer of silicon rich material on the surface of the binary transition metal nitride film.

Method of depositing diffusion barrier for copper interconnect in integrated circuit

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Los Altos, CA, United States of America

Karl B Levy