USA As Represented by Secretary of the Navy

Other

Essilor International (compagnie Generale D'optique)

Essilor International (compagnie General D'optique)

Essilor International

Karl Arthur Klemm

Linda F Johnson

Mark B Moran

Julie Anne Fairbank

Yassin Yusef Turshani

Steven Weber

Sidney Shaw White, Jr

Hoa Thien Dang

Sheila M Tatman

Olivier Beinat

Karen West

Robert Z Dalbey

An antireflection, antistatic transparent coating for an optical article, comprising at least one electrically conductive layer, wherein said electrically conductive layer contains at least one metal and has a thickness lower than or equal to 1 nm. The invention also relates to a an optical article having two main faces, at least one which being coated with the above antireflection, antistatic transparent coating and a process for depositing the above antireflection, antistatic transparent coating onto said optical article.

Optical article having an antistatic, antireflection coating and method of manufacturing same

This invention relates to a method for preparing at least one mold part of a two-part mold useful for transferring a hydrophobic top coat from a mold onto an optical substrate. Further, the invention relates to a method for easily transferring a hydrophobic top coat from a mold onto the anti-reflecting coating of a coated optical substrate. Additionally, the invention relates to a method which provides improved adhesion of the hydrophobic top coat onto an optical substrate and in particular onto an anti-reflecting coating of a coated optical substrate. The invention also discloses a mold part useful in such methods.

Method for preparing a mold part useful for transferring a coating onto an optical substrate

The invention relates to a method for forming from a mold optical articles. These methods are particularly useful in preparing ophthalmic articles such as ophthalmic lenses, having several optical coatings thereon. The invention also relates to ophthalmic articles produced by these methods.

Method for forming on-site a coated optical article

The invention relates to a method for forming from a mold optical articles. These methods are particularly useful in forming ophthalmic articles such as ophthalmic lenses, having a hydrophobic top coat thereon. Ophthalmic articles produced by these methods are also part of the invention.

Method for transferring from a mold a hydrophobic top coat onto an optical substrate

A transducer is deposited on each fiber of an optical fiber scene projector to convert portions of electromagnetic radiation to emitted radiation, h as IR. The transducer, is adaptable to large arrays of optical fibers and can be fabricated using mature conventional processes, such as vapor deposition, for example. The components of the transducer can be tailored to handle different incident radiation and produce desired emitted radiation. Dielectric layers having thicknesses equal to odd-numbered multiples of quarter wavelengths of the electromagnetic radiation receive the electromagnetic radiation and a reflector adjacent to the layers reflects unabsorbed portions of radiation back through the layers. An absorber layer interposed between adjacent dielectric layers absorbs the received and the reflected radiation so as to convert the absorbed radiation into heat energy. Second dielectric layers having thicknesses equal to odd-numbered multiples of quarter wavelengths of desired emitted radiation are deposited adjacent to the reflector. A second absorber layer interposed between the adjacent layers of the second dielectric layers absorbs the heat energy and converts it to the emitted radiation, such as IR, although, other wavelengths could be emitted depending on the dimensions and materials used. Different number of layers may be included as needed to modify the emitted radiation.

Optical thin-film cavities for transducing visible radiation to infrared

In depositing an adhering, continuous, polycrystalline diamond film on a substrate by forming a refractory nitride interlayer on the substrate and depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, the crystal orientation of the deposited diamond, &lt;111&gt; or &lt;100&gt;, is selected by controlling the pressure in the chamber. Preferably, relatively higher microwave power is utilized at higher pressures.

Selection of crystal orientation in diamond film chemical vapor

An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. The diamond film may be of optical quality and may be deposited without mechanical treatment or seeding of the zinc sulfide substrate or the nitride interlayer. However, diamond deposition may be facilitated by abrasion of the interlayer before diamond deposition.

Deposition of polycrystalline diamond film on zinc sulfide substrate

An adhering, continuous diamond film of optical or semiconductor quality is deposited on a substrate by forming on the substrate a layer of a nitride and then depositing diamond on the nitride without mechanical treatment or seeding of the substrate or the nitride. A substrate of silicon or silicon carbide has been used by depositing a layer of silicon dioxide directly on the substrate and then directly depositing the nitride layer on the silicon dioxide. A polycrystalline diamond film has been deposited by heating the substrate and nitride layer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon with the nitride being a refractory nitride to withstand the temperature at which the diamond is deposited. Deposition of the diamond is facilitated by adding oxygen to the mixture after a sufficient thickness of diamond is deposited to protect the nitride layer from oxidation.

Deposition of high quality diamond film on refractory nitride

Nucleation of diamond crystallites is initiated on electrically nonconducting substrates and on semiconducting substrates at a temperatures of 650.degree. C. or lower by providing atoms of a metal in a plasma formed by activation, as by microwave energy in a vacuum chamber, of a mixture of hydrogen and a carbon containing vapor. A continuous, adhering film of polycrystalline diamond is then grown on the substrate from the nucleated crystallites. The nucleation is effective when the substrate has a positive electric potential relative to a wall of the chamber. Positive and negative dopants may be provided in the vapor to give a semiconducting film. The nucleation and film growth are effective at the relatively low substrate temperatures so that dopant diffusion and substrate damage occurring at the usual, higher diamond film deposition temperatures are avoided. Atoms of chromium, titanium, and nickel are particularly effective and may be provided by a metalorganic compound in the vapor or by a solid material which is etched by the plasma and may be the pure metal or its oxide, nitride, or alloy. The solid material may be provided as an open vessel or on a ring within which the substrate is placed or as a coating deposited on the substrate. A partial coating of the solid material results in the diamond film being selectively deposited only on the uncoated portion.

Metal initiated nucleation of diamond

A continuous, adhering film of polycrystalline diamond is grown on a grape substrate from diamond crystallites nucleated at a metal layer on the substrate when subjected to a microwave activated plasma of hydrogen and a carbon containing gas. Pyrolytic graphite and cured graphite adhesive are effective and other forms of graphite may be effective. Effective metals are chromium, nickel, and titanium. Diamond nucleation apparently occurs at crystallites of metal carbides nucleated by carbon from the plasma so that other carbide forming metals may be effective. Metal not nucleated as the carbide is, apparently, etched away by the plasma; and the diamond film is effectively deposited directly on the graphite since the diamond film is not contaminated by the metal even at the graphite interface where carbide contamination was less than 0.2 percent from a 2500 .ANG. chromium film. The diamond film deposition occurs at substrate temperatures as low as 650.degree. C. and may be facilitated by a positive voltage bias of the substrate relative to an enclosing vacuum chamber wall. Partial coating of a graphite surface with the metal results in diamond deposition only at the coated portion. A grid of diamond film has thus been deposited on graphite by application of a nickel screen to the graphite, and diamond film may be deposited in a desired pattern by masking the substrate to deposit the metal at selected substrate portions.

Diamond film deposition on graphite

Coatings for a diamond surface of an optical element control reflections and oxidation at the surface. Transmissive element coatings effective in the infrared and at up to 800.degree. C. have a first layer of amorphous hydrogenated silicon deposited directly on the diamond and have a second layer of aluminum nitride, yttrium oxide, hafnium oxide or other refractory oxide deposited directly on the first layer. The first layer may be relatively thin and for adhesion only with the second layer constructed of an oxide and having a thickness selected to control reflection, or the thicknesses of both layers may be selected together to control reflection with the proportion of hydrogen in the first layer varied to select its refractive index.

Anti-reflection and anti-oxidation coatings for diamond

In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

Growing community of inventors

Largo, FL, United States of America

Karl Arthur Klemm