Siemens Aktiengesellschaft

Karin Unger

Josef Mathuni

Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.

Growing community of inventors

Munich, Germany

Karin Unger