Infineon Technologies Ag

Karin Fuchs

Volker Lehmann

Thomas Peter Haneder

Alfred Martin

Stephan Dertinger

Reinhard Marz

Michaela Fritz

Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 &#x3bc;m distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

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Bach, Germany

Karin Fuchs