Infineon Technologies Ag

Karin Buchholz

Hans-Joachim Schulze

Gerhard Schmidt

Matteo Dainese

Elmar Falck

Frank Umbach

A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of N1&#x2267;2 first segments and a number of N2&#x2267;1 second segments. Each of the first segments is electrically connected to each of the other first segments and to each of the second segments, and each of the second segments has an electric resistivity higher than an electric resistivity of each of the first segments.

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Munich, Germany

Karin Buchholz