Infineon Technologies Ag

Infineon Technologies Wireless Solutions Sweden Ab

Karin Andersson

Hans Norström

Patrick Algotsson

Patrik Algotsson

A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter regions above the buried collector region. The lateral extensions and locations of the base and emitter regions and of the buried collector region are, for each of the vertical bipolar transistors, selected to create an overlap between the base and emitter regions, and the buried collector region, as seen from above, wherein at least some of the overlaps are selected to be different.

Method for producing vertical bipolar transistors and integrated circuit

A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.

Growing community of inventors

Haesselby, Sweden

Karin Andersson