University College Cork

Laser Systems and Solutions of Europe

Laser Systems & Solutions of Europe (lasse) Screen Semiconductor Solutions Co. Ltd.

Karim Huet

Fulvio Mazzamuto

Cyril Dutems

Maryam Shayesteh

Ray Duffy

Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Method of laser irradiation of a patterned semiconductor device

The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device () by providing a first layer () of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (A) having a substantially planar interface with the underlying first (Ge) layer.

Low resistance contacts for semiconductor devices

Growing community of inventors

Gennevilliers, France

Karim Huet