Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Karim Hassan

Salim Boutami

Bertrand Szelag

Quentin Wilmart

Badhise Ben Bakir

Christophe Kopp

Corrado Sciancalepore

Sylvie Menezo

Yohan Desieres

David Bitauld

Bayram Karakus

Jean-Michel Hartmann

Daivid Fowler

Hélène Duprez

Laetitia Adelmini

Leopold Virot

Thomas Anfray

Cécilia Dupre

André Myko

Alexandre Shen

Joan Ramirez

Stephane Malhouitre

Stéphane Malhouitre

Badhise Ben-Bakir

A process for fabricating an optoelectronic system having an optical device coupled to an integrated photonic circuit includes producing a lower waveguide from the thin single-crystal-silicon layer of a first SOI substrate, then joining a second SOI substrate thereto and producing an intermediate waveguide from the thin single-crystal-silicon layer of the second SOI substrate.

Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Method for fabricating a photonic chip

A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is SiGe, where x is in the range between 0.2 and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Photonic chip

A wavelength-tunable laser emission device includes a cavity delimited by a first and a second Sagnac mirror. The cavity has an amplifying medium and a tunable spectral filter using the Vernier effect. The filter includes at least three resonant rings arranged in cascade, each resonant ring integrating a loop mirror with wavelength tunable reflectivity.

Tunable Vernier effect laser emission device

A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.

Method for manufacturing a mixed layer comprising a silicon waveguide and a silicon nitride waveguide

A laser source includes a semiconductor pad containing an active waveguide arranged on a functionalized substrate having an integrated waveguide. The integrated waveguide is formed from a stack of a first portion and of a second portion. A Bragg grating is arranged in the first portion and is covered by the second portion.

Hybrid laser source comprising an integrated waveguide containing an intermediate Bragg grating

An assembly including a first waveguide produced in a first photonic chip and that extends in a first direction in order to guide an optical signal at a wavelength &#x3bb;, an array of a plurality of second waveguides, which is produced in a second photonic chip adjoined to the first photonic chip, and a power summer including inputs that are optically connected to one end of each of the second waveguides. Each of the second waveguides includes upstream and downstream segments that are offset with respect to each other in the second direction. The configurations of the first waveguide and of the second waveguides are such that, for any position of the first waveguide above the array, the distance between one of the segments of the first waveguide and one of the segments of one of the second waveguides is smaller than &#x3bb;/2.

Assembly comprising first and second photonic chips that are adjoined to each other

A photonic device manufacturing method, including a step of transfer, onto a same surface of a photonic circuit previously formed inside and on top of a first substrate, of at least a first die made up of a III-V semiconductor material and of at least a second die made up of silicon nitride, the method further including a step of forming of photonic components in said at least one first and at least one second dies.

Integrated photonic device manufacturing method

The invention is concerned with a structured optical fibre sensor, comprising a light source (), a detection system () and a Bragg grating optical fibre () connected to said source and said system. The light source is a wavelength-tunable laser emission device () comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M, M). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R, R, R, R) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

Structured optical fibre sensor integrating a tunable vernier effect laser emission device

Photonic transmitter, comprising: The stack comprises: The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.

Photonic transmitter having III-V gain media and adiabatically-coupled waveguides

A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met: where: kis a preset integer number higher than or equal to 1, Nand Nare the numbers of sections in the first and second arms, respectively, Land Lare the lengths of the nth sections of the first and second arms, respectively, neffand neffare the effective indices of the nth sections of the first and second arms, respectively.

Semiconductor laser source and method for emitting with this laser source

A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: where: kis a preset integer number higher than or equal to 1, Nand Nare the numbers of sections in the first and second arms, respectively, Land Lare the lengths of the nth sections of the first and second arms, respectively, neffand neffare the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

Semiconductor laser source

A photodiode which includes a core of a first waveguide that terminates in a tapered termination that extends above a core, made of germanium or of SiGe, of a second waveguide, a matching strip that extends opposite the tapered termination on one side and opposite the core of the second waveguide on the opposite side, this matching strip being coupled optically to the core of the second waveguide by an evanescent coupling and including a first zone inside which its effective propagation index is equal to the effective propagation index of a second zone of the tapered termination, these first and second zones optically coupling the tapered termination to the matching strip through a modal coupling, and a low-index layer that extends between the matching strip and the tapered termination.

Photodiode with improved power absorption

Provided is a device for modulating or switching an optical signal, comprising a first ring waveguide made of a first material with at least one p-n or p-i-n junction, and a second ring waveguide arranged axially opposite the first ring waveguide. The second ring waveguide is made of a second material that has a thermo-optic coefficient lower than the thermo-optic coefficient of the first material. The first ring waveguide is a sub-wavelength network.

Athermal modulator-switch with two superimposed rings

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 &#x3bc;m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

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Moneteau, France

Karim Hassan