Centre National De La Recherche Scientifique

Thales

Université Paris—sud

Université Paris-saclay

Karim Bouzehouane

Manuel Bibes

Vincent Garcia

Stéphane Fusil

Agnès Barthelemy

The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization. According to the invention, the ferroelectric element possesses a domain structure, said domains corresponding to regions of the ferroelectric element the polarization of which is oriented one way in a single direction; and when a voltage is applied between the electrodes, the absolute value of the voltage being equal to or higher than the absolute value of what is called a saturation voltage, the ferroelectric element main comprises only a single domain; and when a voltage is applied between the electrodes, the absolute value of the voltage being lower than the absolute value of what is called the saturation voltage, the ferroelectric element comprises a plurality of separate domains, the spatial distribution of said domains and their proportions being controlled by the chosen voltage value.

Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device

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Janvry, France

Karim Bouzehouane