Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique

Université Joseph Fourier

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Karim Aissou

Thierry Baron

Gabriel Molas

Julien Buckley

Sebastien Fort

Sami Halila

Redouane Borsali

Sébastien Fort

A material (M) includes a substrate one of the surfaces of which is covered with a layer based on a block copolymer having a block (B) consisting of a polysaccharide and to its uses for electronics, in order to prepare organic electroluminescent diodes (OLEDs) or organic photovoltaic cells (OPV) or for designing detection devices (nanobiosensors, biochips).

Thin films organized in nanodomains on the basis of copolymers having polysaccharide blocks for applications in nanotechnology

A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.

Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines

A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.

Method for producing a floating gate with an alternation of lines of first and second materials

Growing community of inventors

Gradignan, France

Karim Aissou