Planar Systems, Inc.

Beneq Oy

Lumineq Oy

Intel Corporation

U.S. Department of Energy

Planar Systems Oy

Kari Härkönen

Teemu Lang

Jarmo Maula

Hannu Leskinen

Pekka Kuosmanen

Bradley J Aitchison

Mark L Doczy

Nathan E Baxter

Robert S Chau

Gary J Jorgensen

Anguel N Nikolov

Brad Aitchison

Jani Holopainen

Joel W Pankow

Kent M Terwilliger

Martti Sonninen

Jukka Lammi

Stephen H Glick

Heli Seppänen

Pertti Malvaranta

Mikko Saikkonen

Nora Isomaki

Tommy Turkulainen

Asta Ollila

Nathan Baxter

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element () comprises a first insulator layer (), a second insulator layer (), and a first phosphor layer () of activator-group 4 element codoped zinc sulfide between the first insulator layer () and the second insulator layer (). The first phosphor layer () has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

Display element and method for manufacturing a display element

A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (); forming a luminescent layer (), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer () on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide AlOand zirconium oxide ZrOsub-layers.

Inorganic TFEL display element and manufacturing

A transparent thin film display element () with a display region(), and a transition region () having a first edge () bordering the display region and a second edge () opposite to the first edge, the transparent display element having a layer stack () comprises:a first conductor layer (); a second conductor layer (); and an emissive layer () superposed between the first and the second conductor layers and configured to emit light upon electrical current flowing through the emissive layer between the first and the second conductor layers. At least one layer () of a group comprising the first and the second conductor layers and the emissive layer has, in the transition region (), a first coverage at the first edge (), a second coverage lower than the first coverage at the second edge (), and an intermediate coverage lying between the first and the second coverage.

Thin film display element and manufacturing

An improved transparent thin film electroluminescent display including a substrate, an active layer capable of emitting a wavelength range of visible light, a viewing side surface and a narrowband reflector reflecting part of the light of the active layer back towards the viewing side surface is disclosed. Said narrowband reflector and viewing side surface are arranged on opposite sides of the active layer. A method for manufacturing an improved transparent thin film electroluminescent display including a narrowband reflector is also disclosed.

Display device and a method for manufacturing such device

An inorganic, transparent thin film electroluminescent display element with a display area having at least one emissive area and at least one non-emissive area, improved in terms of transparency and inconspicuousness is provided, as well as a method for its preparation. The structure according to the invention comprises a substrate (), a first conducting layer (), a first insulating layer (), a luminescent layer (), a second insulating layer (), a second conductive layer () and a third insulating layer () comprising insulating, inorganic material. Emissive and non-emissive areas of the display are rendered optically similar by providing passive film elements () at the non-emissive areas, namely by providing conductor material also at these areas when the conductive electrodes connected to a power source for generating the required voltage are deposited at the emissive areas.

Transparent inorganic thin-film electroluminescent display element and method for manufacturing it

A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, AlO, AlSiO, TiO, and an AlO/TiOlaminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiONfilm.

Multilayer moisture barrier

The present invention relates to a method for enhancing uniformity of metal oxide coatings formed by Atomic Layer Deposition (ALD) or ALD-type processes. Layers are formed using alternating pulses of metal halide and oxygen-containing precursors, preferably water, and purging when necessary. An introduction of modificator pulses following the pulses of the oxygen-containing precursor affects positively on layer uniformity, which commonly exhibits gradients, particularly in applications with closely arranged substrates. In particular, improvement in layer thickness uniformity is obtained. According to the invention, alcohols having one to three carbon atoms can be used as the modificator.

Method in depositing metal oxide materials

The invention relates to a multilayer material deposited by ALD. A multi-layer structure of a high refractive index material is deposited on a substrate using ALD at a temperature below about 450&#xb0; C. Advantageous results are obtained when a high refractive index material A is coated with another material B after a certain thickness of material A has been achieved. Thus, the B barrier layer stops the tendency for material A to crystallize. The amorphous structure gives rise to less optical loss. Further, the different stress nature of materials A and B may be utilized to achieve a final optical material with minimal stress. The thickness of each material B layer is less than that of the adjacent A layer(s). The total effective refractive index of the high refractive index material A+B being shall be greater than 2.20 at a wavelength of 600 nm. Titanium oxide and aluminium oxide are preferred A and B materials. The structure is useful for optical coatings.

Multilayer material and method of preparing same

A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.

Deposition of carbon- and transition metal-containing thin films

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.

Diaphragm valve for atomic layer deposition

Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.

Precursor material delivery system for atomic layer deposition

A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.

Diaphragm valve with reliability enhancements for atomic layer deposition

A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.

Growing community of inventors

Kauniainen, Finland

Kari Härkönen