Elux, Inc.

Sharp Laboratories of America, Inc

Karen Yuri Nishimura

Paul John Schuele

Mark Albert Crowder

Changqing Zhan

Themistokles Afentakis

Kurt M Ulmer

Lisa Stecker

A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.

Method for the fabrication and harvest of piezoelectric plates

A method is provided for fabricating a thin-film electronic device employing a piezoelectric plate. The method provides a plurality of piezoelectric plates, and a substrate with electronic devices, each electronic device including a top surface well. A piezoelectric plate suspension is formed and flowed over the substrate. In response to the piezoelectric plate suspension flow, piezoelectric plates are captured in the top surface wells. The electric device top surface wells have well bottom surfaces, with bottom electrical contacts formed on the bottom surfaces. Thus, the capture of a piezoelectric plate in a top surface well entails interfacing a piezoelectric plate electrode, either the first electrode or the second electrode, to the bottom electrical contact. Subsequent to capturing the piezoelectric plates in the top surface wells, a thin-film process forms a conductive line overlying the exposed piezoelectric device electrode (i.e., the electrode not connected to the bottom electrical contact).

Fluidic assembly process using piezoelectric plates

Fabrication and harvest of piezoelectric plates

A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided.

Organic semiconductor transistor with epoxy-based organic resin planarization layer

A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.

Growing community of inventors

La Center, WA, United States of America

Karen Yuri Nishimura