Globalfoundries U.S. Inc.

Karen Nummy

Yusheng Bian

Keith Donegan

Takako Hirokawa

Thomas Houghton

Kevin Dezfulian

Structures including a cavity adjacent to an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate including a cavity with a sidewall, a dielectric layer on the semiconductor substrate, and an edge coupler on the dielectric layer. The structure further comprises a fill region including a plurality of fill features adjacent to the edge coupler. The fill region includes a reference marker at least partially surrounded by the plurality of fill features, and the reference marker has a perimeter that surrounds a surface area of the dielectric layer, and the surface area overlaps with a portion of the sidewall of the cavity.

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Newburgh, NY, United States of America

Karen Nummy