International Business Machines Corporation

Karen L Lestage

Anthony K Stamper

Joseph P Hasselbach

Solutions for forming a semiconductor including an oxide MEMS beam are disclosed. In one embodiment, a method of forming a beam within a sealed cavity includes: depositing a lower insulator layer comprising one or more layers; depositing an upper insulator layer over the first insulator layer, the upper insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer.

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Fairfax, VT, United States of America

Karen L Lestage