Lucent Technologies Inc.

Karen A Grim-Bogdan

Utpal Kumar Chakrabarti

Joseph Brian Seiler

Richard W Glew

Mary L Gray

Chris W Ebert

Nikolaos Tzafaras

A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.

Method of improving laser yield for target wavelengths in epitaxial

A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a corresponding variation of laser wavelength across the substrate. The thermal gradient is preferably achieved by disposing a patterned layer of material (heat reflecting or heat absorbing) on the back side of the substrate, radiatively heating the backside and growing the active layers on the front side. The backside layer is removed when the substrate is lapped to final thickness.

Method for making multiple wavelength semiconductor lasers on a single

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Greenwich, PA, United States of America

Karen A Grim-Bogdan