Massachusetts Institute of Technology

Micron Technology Incorporated

Other

Karan Mehta

Jason Scott Orcutt

Rajeev J Ram

Roy Edward Meade

Vladimir Marko Stojanovic

Milos A Popovic

Amir Hossein Atabaki

Jeffrey Michael Shainline

Zvi Sternberg

Ofer Tehar-Zahav

Efraim Megged

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.

Waveguide formation using CMOS fabrication techniques

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Karan Mehta