Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Iucf-hyu

Kap-Soo Yoon

Sung-Hoon Yang

Ki-Won Kim

Woo-Geun Lee

Do-Hyun Kim

Ki-Hun Jeong

Jae-Ho Choi

Je-Hun Lee

Seung-Ha Choi

Seung-Hwan Shim

Young-Wook Lee

Hye-Young Ryu

Sung-Ryul Kim

Hwa-Yeul Oh

Yong-Mo Choi

Pil-Sang Yun

Young-Joo Choi

Kyoung-Jae Chung

Jae-Hyoung Youn

Kyung-Sook Jeon

Dong-Ju Yang

Hyun-Jung Lee

Jang-Soo Kim

Yu-Gwang Jeong

Sang-Gab Kim

Min-Seok Oh

Hong-Kee Chin

Gug-Rae Jo

Shin-Il Choi

Seung-Mi Seo

Jin-Won Lee

Seong-Hun Kim

Woong-Kwon Kim

Sang-Youn Han

Dae-Cheol Kim

Jung-Suk Bang

Byeong-Hoon Cho

Byoung-June Kim

Czang-Ho Lee

Jae-Hyun Park

Dong-Hoon Lee

Chun-Gi You

Chang-Oh Jeong

Bong-Kyun Kim

Yang-Ho Jung

Jun-Ho Song

Yeong-Keun Kwon

Sung-Haeng Cho

Kyung-Seok Son

Yeon-Kyu Moon

Seung Mi Seo

O-Sung Seo

Jin-Pyo Hong

Soon-Wook Hong

Seung-Sok Son

Gung-Rae Jo

Sung Ryul Kim

Young-Ho Do

Koo-Woong Jeong

A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.

Display substrate including thin film transistors having a multilayered oxide semiconductor pattern

A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Thin film transistor array substrate and method of manufacturing the same

A display apparatus includes a pixel part disposed in a display area of a base substrate, including a switching element connected to a signal line, a pixel electrode connected to the switching element and a common electrode that overlaps the pixel electrode, a plurality of fan-out lines disposed in a peripheral area of the base substrate that are connected to the signal line of the display area, a plurality of pads disposed in the peripheral area of the base substrate that are respectively connected to end portions of the fan-out lines, an organic layer that covers the switching element of the display area and that extends from the display area to a portion of the fan-out lines, and an electrode pattern that overlaps the fan-out lines in a boundary portion of the organic layer.

Display apparatus and method of manufacturing the same

The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

Display substrate, method of manufacturing the same

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Thin film transistor panel having an etch stopper on semiconductor

A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.

Display device and manufacturing method thereof

Display substrate

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Method for manufacturing a display panel

A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.

Display substrate and method of manufacturing the same

A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

Thin-film transistor, array substrate having the same and method of manufacturing the same

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Seoul, South Korea

Kap-Soo Yoon