Senic Inc.

Kap Ryeol Ku

Jung Woo Choi

Jong Hwi Park

Jongmin Shim

Sang Ki Ko

Byung Kyu Jang

Jung Doo Seo

Myung Ok Kyun

Jung Gyu Kim

Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.

Silicon carbide powder and method for manufacturing silicon carbide ingot using the same

Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.

Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer

Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.

Silicon carbide wafer and method of manufacturing same

Growing community of inventors

Gyeonggi-do, South Korea

Kap Ryeol Ku