Samsung Electronics Co., Ltd.

Kaoru Yamamoto

Hyeonjin Shin

Kyung-Eun Byun

Jang-Hee Lee

Kee-Young Jun

Geun-O Jeong

Sung-Joo An

Soyoung Lee

Chang-Hyun Kim

Changseok Lee

Hyeon-jin Shin

Keunwook Shin

Changhyun Kim

Hyunjae Song

Eunkyu Lee

Chang-Seok Lee

Hyun-Jae Song

Hyunseok Lim

Jeon-Il Lee

Sungjoo An

Jungsoo Yoon

Keun-Wook Shin

Minhyuk Cho

Geuno Jeong

A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

Wiring structures, methods of forming the same, and semiconductor devices including the same

A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

Semiconductor manufacturing apparatus having an insulating plate

In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device

Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).

Method of forming graphene

Growing community of inventors

Seongnam-si, South Korea

Kaoru Yamamoto