Nuflare Technology, Inc.

Kaoru Tsuruta

Kenji Ohtoshi

Takashi Kamikubo

Shuichi Tamamushi

Rieko Nishimura

Shusuke Yoshitake

Taku Yamada

Tomoo Motosugi

Takayuki Ohnishi

Satoshi Nakahashi

Yasuyuki Taneda

A drawing apparatus includes: a drawing part; a cleaning-gas generator; a first valve between the cleaning-gas generator and the drawing part and adjusting a supply amount of gas to the drawing part; a first pressure gauge measuring a pressure in the drawing part; a compensation-gas introducing part introducing compensation-gas to be supplied between the cleaning-gas generator and the first valve; a second valve between the compensation-gas introducing part and the first valve and adjusting a supply amount of the compensation-gas; and a valve controller controlling the first and second valves, wherein the valve controller controls the first valve to supply the cleaning-gas at a predetermined flow rate to the drawing part and controls the second valve to cause a pressure in the drawing part to be a predetermined pressure when the first pressure gauge detects a pressure reduction due to a reduction in a supply flow rate of the cleaning-gas.

Drawing apparatus and control method thereof

A charged particle beam writing apparatus includes a stage configured to mount a sample placed thereon; an electron optical column including a charged particle gun and deflector, wherein the charged particle gun is configured to emit a charged particle beam, and the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam; an ozone introducing mechanism configured to introduce ozone into the electron optical column; a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes, wherein a negative voltage in which the deflection voltage and the negative DC voltage are added is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.

Charged particle beam writing apparatus and charged particle beam writing method

A charged particle beam writing apparatus includes an emission unit to emit a charged particle beam, a stage to mount thereon a target object to be written, an objective lens to focus the charged particle beam on a surface of the target object, a chamber to house the stage, a measurement unit to measure a partial pressure of a predetermined gas in the chamber in a state where a pressure inside the chamber is controlled to be lower than an atmospheric pressure, and an adjustment unit to adjust a focus position for focusing the charged particle beam on the target object, based on the partial pressure of the predetermined gas.

Charged particle beam writing apparatus, and charged particle beam writing method

A charged particle beam drawing apparatus of an embodiment includes: a drawing unit to perform drawing on a workpiece on a stage by using a charged particle beam; multiple marks located on the stage and having different heights; an irradiation position detector to, when any of the marks is irradiated with the charged particle beam, detect an irradiation position of the charged particle beam on a mark surface of the mark; a drift-amount calculation unit to calculate a drift amount of the charged particle beam on the mark surface by using the irradiation position; a drift-amount processing unit to obtain a drift amount on a workpiece surface by using the drift amounts on at least two of the mark surfaces; and a drawing controller to correct an is irradiation position of the charged particle beam by using the drift amount on the workpiece surface.

Charged particle beam drawing apparatus and charged particle beam drawing method

A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Growing community of inventors

Kanagawa, Japan

Kaoru Tsuruta