Japan Display Inc.

Sanyo Electric Co., Ltd.

U-shin Ltd.

Seiko Epson Corporation

Tottori Sanyo Electric Co., Ltd.

Kaoru Taketa

Hiroki Sugiyama

Takuya Nishimoto

Koji Yoshida

Takao Yamauchi

Nobuo Tsubokura

Kenji Ito

Sayaka Hiura

Masaki Endo

Takayuki Kato

Takayuki Kaida

Norihiro Ikeda

Kimihiko Nagami

Hiroshi Inamura

Togo Morifuji

Shinya Ibuki

Syunsuke Yamaura

Takahiro Shoji

Chiaki Kobayashi

Daisuke Sumi

According to an aspect, a detection device includes: a substrate; a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed; a transistor provided in the photodiode; and an insulating layer provided between layers of the transistor and the photodiode. The insulating layer has a contact hole provided in a central portion of the photodiode in plan view. The lower electrode of the photodiode is provided on the insulating layer, is provided continuously in an area overlapping the contact hole, and is electrically coupled to the transistor at a bottom of the contact hole. A first opening is provided in an area of the upper electrode that overlaps the contact hole.

Detection device

An operation knob device includes an annular holder having an annular holding portion, an annular rotor arranged in the holding portion so as to allow rotation around an axis, an annular knob for which relative movement in a direction along the axis with respect to the rotor is allowed and relative movement in a circumferential direction around the axis is restricted, a first transmission member arranged on a side of a first end of the rotor so as to move with the knob, and a second transmission member attached to the first end so as to rotate integrally with the rotor. The knob has cylindrical inner and outer wall portions, and an opening through which part of a display panel can be visually recognized is defined by the inner wall portion. The first and second transmission members are arranged between the inner wall portion and the outer wall portion.

Operation knob device

An operation knob device includes a holder arranged adjacent to a display panel, a rotor arranged in a holding portion so as to allow rotation around an axis, a knob for which relative movement in a direction along the axis with respect to the rotor is allowed and relative movement in a circumferential direction around the axis is restricted, a conductive transmission member arranged on a first end side of the rotor. The transmission member includes a first transmission member that moves along the axis in conjunction with the knob, a second transmission member that is attached to the first end so as to rotate integrally with the rotor, and a connecting member that conductively connects the first transmission member and the second transmission member.

An image pickup device includes a sensor substrate. The sensor substrate includes: plural photoelectric conversion elements and driving elements for the plural photoelectric conversion elements which are formed on a substrate; wirings electrically connected to the driving elements; and a shield electrode disposed in a region between the plural photoelectric conversion elements and the wirings in a layer different from that of the wirings.

Image pickup device, method of manufacturing the same, and image pickup display system

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusion of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.

Pressure sensor and method for fabricating the same

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusions of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.

A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate electrode has an end surface. A control gate electrode is provided over the semiconductor substrate so as to overlap the floating gate electrode. The control gate electrode has an end surface formed level with the end surface of the floating gate electrode.

Split gate transistor array

A process for producing a semiconductor device comprises the following steps 1 to 9. In step 1, a field oxide layer is formed on a first conductivity type semiconductor substrate to define an active region. In step 2, gate electrodes, second conductivity type source regions and drain regions are formed on the active region, word line are formed on the field oxide layer, and an insulating layer is formed over the substrate. In step 3, contact holes are formed through the insulating layer so as to partly expose the source regions. In step 4, a polysilicon layer is formed over the exposed source region and the entire surface of the insulating layer. In step 5, a photoresist pattern is formed on the polysilicon layer. In step 6, the polysilicon layer is etched under etching conditions where selectivity to the insulating layer is high using the photoresist pattern as an etching mask to simultaneously form a storage pattern and trenches in the semiconductor substrate at the source regions. In step 7, the semiconductor substrate is doped along the storage electrode pattern and the inner surface of the trenches with a second conductivity type impurity. In step 8, a dielectric layer is formed on the doped storage electrode pattern and the doped inner wall surfaces of the trenches. Finally in step 9, an opposite electrode is formed on the dielectric layer.

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Tottori, Japan

Kaoru Taketa